IRFD122中文资料PDF规格书
IRFD122规格书详情
Description
These are advanced power MOSFET is designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. These are N-Channel enhancement mode silicon gate power field effect transistors designed for applications such as switching regulators, switching converters, motor drivers, relay drivers, and drivers for high power bipolar switching transistors requiring high speed and low gate drive power. They can be operated directly from integrated circuits.
Features
• 1.3A and 1.1A, 80V and 100V
• rDS(ON) = 0.30Ω and 0.04Ω
• Single Pulse Avalanche Energy Rated
• SOA is Power Dissipation Limited
• Nanosecond Switching Speeds
• Linear Transfer Characteristics
• High Input Impedance
• Related Literature
- TB334 “Guidelines for Soldering Surface Mount Components to PC Boards”
产品属性
- 型号:
IRFD122
- 制造商:
Rochester Electronics LLC
- 功能描述:
- Bulk
供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
---|---|---|---|---|---|---|---|
IR |
23+ |
DIP4 |
3500 |
全新原装假一赔十 |
询价 | ||
HAR |
2020+ |
80000 |
只做自己库存,全新原装进口正品假一赔百,可开13%增 |
询价 | |||
HARRIS(哈利斯) |
23+ |
DIP4 |
6000 |
询价 | |||
MOT |
1725+ |
DIP4 |
6528 |
只做原装正品现货!或订货假一赔十! |
询价 | ||
IR |
23+ |
DIP-4 |
6100 |
全新原装现货 |
询价 | ||
IR |
21+ |
DIP |
12588 |
原装正品,自己库存 假一罚十 |
询价 | ||
MOT |
92+ |
DIP-4 |
4 |
原装 |
询价 | ||
SI |
2021+ |
DIP4 |
6001 |
百分百原装正品 |
询价 | ||
VISHAY/威世 |
23+ |
DIP-4 |
6000 |
原装正品,支持实单 |
询价 | ||
MOT |
23+ |
65480 |
询价 |