IRFD110中文资料PDF规格书
IRFD110规格书详情
This N-Channel enhancement mode silicon gate power field effect transistor is an advanced power MOSFET designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. All of these power MOSFETs are designed for applications such as switching regulators, switching convertors, motor drivers, relay drivers, and drivers for high power bipolar switching transistors requiring high speed and low gate drive power. These types can be operated directly from integrated circuits.
Features
• 1A, 100V
• rDS(ON) = 0.600Ω
• Single Pulse Avalanche Energy Rated
• SOA is Power Dissipation Limited
• Nanosecond Switching Speeds
• Linear Transfer Characteristics
• High Input Impedance
• Related Literature
- TB334 “Guidelines for Soldering Surface Mount Components to PC Boards”
产品属性
- 型号:
IRFD110
- 功能描述:
MOSFET 100V Single N-Channel HEXFET
- RoHS:
否
- 制造商:
STMicroelectronics
- 晶体管极性:
N-Channel
- 汲极/源极击穿电压:
650 V
- 闸/源击穿电压:
25 V
- 漏极连续电流:
130 A 电阻汲极/源极
- RDS(导通):
0.014 Ohms
- 配置:
Single
- 安装风格:
Through Hole
- 封装/箱体:
Max247
- 封装:
Tube
供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
---|---|---|---|---|---|---|---|
IR |
23+ |
DIP-4 |
6500 |
全新原装假一赔十 |
询价 | ||
IR |
2020+ |
DIP-4 |
80000 |
只做自己库存,全新原装进口正品假一赔百,可开13%增 |
询价 | ||
VISH |
三年内 |
1983 |
纳立只做原装正品13590203865 |
询价 | |||
IOR |
23+ |
CDIP4 |
20000 |
原厂原装正品现货 |
询价 | ||
IR |
9940+ |
DIP4 |
100 |
一级代理,专注军工、汽车、医疗、工业、新能源、电力 |
询价 | ||
IR |
27 |
原装正品长期供货,如假包赔包换 徐小姐13714450367 |
询价 | ||||
HARRIS(哈利斯) |
23+ |
DIP4 |
6000 |
诚信服务,绝对原装原盘 |
询价 | ||
Vishay Siliconix |
21+ |
4DIP |
13880 |
公司只售原装,支持实单 |
询价 | ||
IR |
2020+ |
HEXDIP |
16800 |
绝对原装进口现货,假一赔十,价格优势!? |
询价 | ||
IR |
20+ |
DIP-4 |
11520 |
特价全新原装公司现货 |
询价 |