IRFD113中文资料PDF规格书
IRFD113规格书详情
POWER-MOSFET FIELD EFFECT POWER TRANSISTOR
This series of N-Channel Enhancement-mode Power MOSFET utilizes GEs advanced Power DMOS technology to achieve low on-resistance with excellent device ruggedness and reliability.
This design has been optimized to give superior performance in most switching applications including: switching power supplies, inverters, converters and solenoid/relay drivers. Also, the extended safe operating area with good linear transfer characteristics makes it well suited for many linear applications such as audio amplifiers and servo motors.
产品属性
- 型号:
IRFD113
- 功能描述:
MOSFET N-Chan 100V 1.0 Amp
- RoHS:
否
- 制造商:
STMicroelectronics
- 晶体管极性:
N-Channel
- 汲极/源极击穿电压:
650 V
- 闸/源击穿电压:
25 V
- 漏极连续电流:
130 A 电阻汲极/源极
- RDS(导通):
0.014 Ohms
- 配置:
Single
- 安装风格:
Through Hole
- 封装/箱体:
Max247
- 封装:
Tube
供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
---|---|---|---|---|---|---|---|
ON |
23+ |
NA |
6500 |
全新原装假一赔十 |
询价 | ||
VIS |
2020+ |
DIP |
80000 |
只做自己库存,全新原装进口正品假一赔百,可开13%增 |
询价 | ||
HARRIS |
21+ |
35200 |
一级代理/放心采购 |
询价 | |||
IR |
94+ |
DIP-4 |
5 |
一级代理,专注军工、汽车、医疗、工业、新能源、电力 |
询价 | ||
Vishay Siliconix |
21+ |
4DIP |
13880 |
公司只售原装,支持实单 |
询价 | ||
MOTOROLA/摩托罗拉 |
2022 |
DIP4 |
80000 |
原装现货,OEM渠道,欢迎咨询 |
询价 | ||
IR |
22+ |
DIP-4 |
8000 |
原装正品支持实单 |
询价 | ||
IOR |
6D |
DIP-4 |
100 |
询价 | |||
HARRIS |
23+ |
589610 |
新到现货 原厂一手货源 价格秒杀代理! |
询价 | |||
MOT |
9207 |
382 |
公司优势库存 热卖中! |
询价 |