IRFD120中文资料PDF规格书
IRFD120规格书详情
DESCRIPTION
Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness.
The 4 pin DIP package is a low cost machine-insertable case style which can be stacked in multiple combinations on standard 0.1 pin centers. The dual drain serves as a thermal link to the mounting surface for power dissipation levels up to 1 W.
FEATURES
• Dynamic dV/dt Rating
• Repetitive Avalanche Rated
• For Automatic Insertion
• End Stackable
• 175 °C Operating Temperature
• Fast Switching
• Ease of Paralleling
• Lead (Pb)-free Available
产品属性
- 型号：
IRFD120
- 功能描述：
MOSFET 100V Single N-Channel HEXFET
- RoHS：
否
- 制造商：
STMicroelectronics
- 晶体管极性：
N-Channel
- 汲极/源极击穿电压：
650 V
- 闸/源击穿电压：
25 V
- 漏极连续电流：
130 A 电阻汲极/源极
- RDS（导通）：
0.014 Ohms
- 配置：
Single
- 安装风格：
Through Hole
- 封装/箱体：
Max247
- 封装：
Tube
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
IR |
2020+ |
DIP-4 |
16800 |
绝对原装进口现货,假一赔十,价格优势!? |
询价 | ||
Vishay Siliconix |
22+ |
4DIP |
9000 |
原厂渠道,现货配单 |
询价 | ||
IR |
23+ |
65480 |
询价 | ||||
23+ |
TO-220 |
12800 |
专注原装正品现货特价中量大可定 |
询价 | |||
IR |
98+ |
DIP |
33 |
询价 | |||
IOR |
23+ |
DIP4 |
4500 |
全新原装、诚信经营、公司现货销售 |
询价 | ||
IR |
23+ |
NA |
880000 |
明嘉莱只做原装正品现货 |
询价 | ||
IR |
22+ |
DIP |
10000 |
绝对全新原装现货热卖 |
询价 | ||
INTERNATIONA |
23+ |
DIP |
9888 |
专做原装正品,假一罚百! |
询价 | ||
IR |
0703+ |
DIP4 |
10 |
一级代理,专注军工、汽车、医疗、工业、新能源、电力 |
询价 |
