HO-P-4105规格书供应价格莱姆电子LEM-114ic电子网

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零件编号	下载&订购	功能描述	制造商&上传企业	LOGO
HO-P-4105	文件：1.33861 Mbytes Page：15 Pages	Current Transducer	LEMLEM Electronics (China) Co., Ltd. 莱姆电子莱姆（LEM）集团	LEM
IIRFR4105	文件：334.94 Kbytes Page：2 Pages	N-ChannelMOSFETTransistor •DESCRITION •FastSwitching •FEATURES •Staticdrain-sourceon-resistance:RDS(on)≤45mΩ •Enhancementmode: •100avalanchetested •MinimumLot-to-Lotvariationsforrobustdeviceperformanceandreliableoperation	ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司	ISC
IIRFR4105Z	文件：335.34 Kbytes Page：2 Pages	N-ChannelMOSFETTransistor •DESCRITION •HighSpeedPowerSwitching •FEATURES •Staticdrain-sourceon-resistance:RDS(on)≤24.5mΩ •Enhancementmode: •100avalanchetested •MinimumLot-to-Lotvariationsforrobustdeviceperformanceandreliableoperation	ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司	ISC
IRFL4105	文件：168.77 Kbytes Page：9 Pages	PowerMOSFET(Vdss=55V,Rds(on)=0.045ohm,Id=3.7A) Description FifthGenerationHEXFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETPowerMOSFETsarewellknownfor,provide	IRF International Rectifier	IRF
IRFL4105	文件：827.7 Kbytes Page：9 Pages	UltraLowOn-Resistance Description TheSOT-223packageisdesignedforsurface-mountusingvaporphase,infrared,orwavesolderingtechniques.Itsuniquepackagedesignallowsforeasyautomaticpickand-placeaswithotherSOTorSOICpackagesbuthastheaddedadvantageofimprovedthermalperformanceduetoanenla	KERSEMI Kersemi Electronic Co., Ltd.	KERSEMI
IRFL4105	文件：577.74 Kbytes Page：6 Pages	60VN-ChannelIRFL4105 GeneralDescription TheselogiclevelN-ChannelenhancementThisvery highdensityprocessisespeciallytailoredto minimizeon-stateresistanceandprovide superior switchingperformance,andwithstandhigh energypulse intheavalancheandcommutation modes. Thesedevicesareparticula	EVVOSEMIEVER SEMICONDUCTOR CO.,LIMITED 翊欧	EVVOSEMI
IRFL4105PBF	文件：158.56 Kbytes Page：9 Pages	HEXFET짰PowerMOSFET	IRF International Rectifier	IRF
IRFL4105PBF	文件：163.88 Kbytes Page：9 Pages	AdvancedProcessTechnology	VishayVishay Siliconix 威世科技威世科技半导体	Vishay
IRFL4105PBF	文件：498.91 Kbytes Page：10 Pages	HEXFET짰PowerMOSFET	InfineonInfineon Technologies AG 英飞凌英飞凌科技股份公司	Infineon
IRFL4105PBF	文件：163.88 Kbytes Page：9 Pages	AdvancedProcessTechnology	IRF International Rectifier	IRF
IRFL4105TRPBF	文件：163.88 Kbytes Page：9 Pages	AdvancedProcessTechnology	VishayVishay Siliconix 威世科技威世科技半导体	Vishay
IRFR4105	文件：144.58 Kbytes Page：10 Pages	PowerMOSFET(Vdss=55V,Rds(on)=0.045ohm,Id=27A??	IRF International Rectifier	IRF
IRFR4105	文件：334.94 Kbytes Page：2 Pages	N-ChannelMOSFETTransistor •DESCRITION •FastSwitching •FEATURES •Staticdrain-sourceon-resistance:RDS(on)≤45mΩ •Enhancementmode: •100avalanchetested •MinimumLot-to-Lotvariationsforrobustdeviceperformanceandreliableoperation	ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司	ISC
IRFR4105	文件：3.74603 Mbytes Page：10 Pages	UltraLowOn-Resistance Description FifthGenerationHEXFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachievethelowestpossibleon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETPowerMOSFETsarewellknownfor,p	KERSEMI Kersemi Electronic Co., Ltd.	KERSEMI
IRFR4105	文件：490.14 Kbytes Page：7 Pages	55VN-ChannelMOSFET Description UltraLowOn-Resistance FastSwitching FullyAvalancheRated Lead-Free VDS(V)=50V ID=27A(VGS=10V) RDS(ON)	UMWUMW Rightway Semiconductor Co., Ltd. 友台半导体广东友台半导体有限公司(简称UMW?)	UMW
IRFR4105PBF	文件：240.03 Kbytes Page：10 Pages	HEXFETPowerMOSFET Description FifthGenerationHEXFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachievethelowestpossibleon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETPowerMOSFETsarewellknownfor,p	IRF International Rectifier	IRF
IRFR4105PBF	文件：244.71 Kbytes Page：11 Pages	UltraLowOn-Resistance	IRF International Rectifier	IRF
IRFR4105PBF	文件：3.84606 Mbytes Page：10 Pages	UltraLowOn-Resistance Description FifthGenerationHEXFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachievethelowestpossibleon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETPowerMOSFETsarewellknownfor,p	KERSEMI Kersemi Electronic Co., Ltd.	KERSEMI
IRFR4105PBF	文件：3.84791 Mbytes Page：10 Pages	UltraLowOn-Resistance Description FifthGenerationHEXFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachievethelowestpossibleon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETPowerMOSFETsarewellknownfor,p	KERSEMI Kersemi Electronic Co., Ltd.	KERSEMI
IRFR4105PBF	文件：244.71 Kbytes Page：11 Pages	UltraLowOn-Resistance Description FifthGenerationHEXFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachievethelowestpossibleon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETPowerMOSFETsarewellknownfor,p	IRF International Rectifier	IRF

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供应商	型号	品牌	批号	封装	库存	备注	价格
深圳市鹏华威电子有限公司	HOP500-SB	LEM	2024+	SENSOR	271	原厂直销,支持实单,保质期5年	询价
深圳市澳亿芯电子科技有限公司	HOP-502W		14+		400	普通	询价
贸泽芯城（深圳）电子科技有限公司	HOP-502W		23+		10000	原厂授权一级代理,专业海外优势订货,价格优势、品种	询价
瀚佳科技(深圳)有限公司	HOP600-SB		16+		2100	公司大量全新现货随时可以发货	询价
深圳市创新迹电子有限公司	HOP600-SB		23+		7300	专注配单,只做原装进口现货	询价
深圳市安富世纪电子有限公司	HOP600-SB		23+		7300	专注配单,只做原装进口现货	询价
深圳市明嘉莱科技有限公司	HOP60-48S3V3-LBG	BCT	24+	NA	860000	明嘉莱只做原装正品现货	询价
深圳中芯器材有限公司	HOPA2335AIDR	HXY MOSFET(华轩阳电子)	23+	SOP-8	101	900条运算放大器只做原装现货	询价
现代芯城（深圳）科技有限公司	HoRF0805-1/8W-30mR-1		24+	N/A	54000	一级代理-主营优势-实惠价格-不悔选择	询价

更多HO-P-4105供应商更新时间2024-9-20 10:27:00

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