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IRFR4105PBF中文资料PDF规格书
IRFR4105PBF规格书详情
Description
Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient device for use in a wide variety of applications.
The D-PAK is designed for surface mounting using vapor phase, infrared, or wave soldering techniques. The straight lead version (IRFU series) is for through hole mounting applications. Power dissipation levels up to 1.5 watts are possible in typical surface mount applications.
● Ultra Low On-Resistance
● Surface Mount (IRFR4105)
● Straight Lead (IRFU4105)
● Fast Switching
● Fully Avalanche Rated
● Lead-Free
产品属性
- 型号：
IRFR4105PBF
- 功能描述：
MOSFET 55V 1 N-CH HEXFET 45mOhms 22.7nC
- RoHS：
否
- 制造商：
STMicroelectronics
- 晶体管极性：
N-Channel
- 汲极/源极击穿电压：
650 V
- 闸/源击穿电压：
25 V
- 漏极连续电流：
130 A 电阻汲极/源极
- RDS（导通）：
0.014 Ohms
- 配置：
Single
- 安装风格：
Through Hole
- 封装/箱体：
Max247
- 封装：
Tube
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
IR |
2020+ |
TO-252 |
80000 |
只做自己库存,全新原装进口正品假一赔百,可开13%增 |
询价 | ||
IR |
2020+ |
DPAK |
16800 |
绝对原装进口现货,假一赔十,价格优势!? |
询价 | ||
IR |
23+ |
NA/ |
6019 |
原装现货,当天可交货,原型号开票 |
询价 | ||
IR |
1347+ |
TO-252 |
52 |
一级代理,专注军工、汽车、医疗、工业、新能源、电力 |
询价 | ||
nxp |
2023+ |
TO-252 |
80000 |
一级代理/分销渠道价格优势 十年芯程一路只做原装正品 |
询价 | ||
IR |
24+ |
TO-252 |
58000 |
全新原厂原装正品现货,可提供技术支持、样品免费! |
询价 | ||
IR |
2021+ |
TO-252 |
3500 |
十年专营原装现货,假一赔十 |
询价 | ||
IR |
22+ |
TO-252 |
8000 |
原装正品支持实单 |
询价 | ||
IR |
TO-252-3 |
265209 |
假一罚十原包原标签常备现货! |
询价 | |||
INFINEON-英飞凌 |
24+25+/26+27+ |
TO-252-3 |
36218 |
一一有问必回一特殊渠道一有长期订货一备货HK仓库 |
询价 |
