首页 >HGTP3N60A4D>规格书列表
零件编号 | 下载&订购 | 功能描述 | 制造商&上传企业 | LOGO |
---|---|---|---|---|
HGTP3N60A4D | 600V, SMPS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode TheHGT1S3N60A4DSandtheHGTP3N60A4DareMOSgatedhighvoltageswitchingdevicescombiningthebestfeaturesofMOSFETsandbipolartransistors.ThesedeviceshavethehighinputimpedanceofaMOSFETandthelowon-stateconductionlossofabipolartransistor.Themuchloweron-statevoltaged | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | Fairchild | |
HGTP3N60A4D | 600V, SMPS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode TheHGT1S3N60A4DSandtheHGTP3N60A4DareMOSgatedhighvoltageswitchingdevicescombiningthebestfeaturesofMOSFETsandbipolartransistors.ThesedeviceshavethehighinputimpedanceofaMOSFETandthelowon-stateconductionlossofabipolartransistor.Themuchloweron-statevoltaged | IntersilIntersil Corporation 瑞萨电子瑞萨电子株式会社 | Intersil | |
HGTP3N60A4D | 包装:管件 封装/外壳:TO-220-3 类别:分立半导体产品 晶体管 - UGBT、MOSFET - 单 描述:IGBT 600V 17A 70W TO220AB | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | ONSEMI | |
600V, SMPS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode TheHGT1S3N60A4DSandtheHGTP3N60A4DareMOSgatedhighvoltageswitchingdevicescombiningthebestfeaturesofMOSFETsandbipolartransistors.ThesedeviceshavethehighinputimpedanceofaMOSFETandthelowon-stateconductionlossofabipolartransistor.Themuchloweron-statevoltaged | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | Fairchild | ||
600V,SMPSSeriesN-ChannelIGBT TheHGTD3N60A4S,HGT1S3N60A4SandtheHGTP3N60A4areMOSgatedhighvoltageswitchingdevicescombiningthebestfeaturesofMOSFETsandbipolartransistors.ThesedeviceshavethehighinputimpedanceofaMOSFETandthelowon-stateconductionlossofabipolartransistor.Themuchloweron-stat | IntersilIntersil Corporation 瑞萨电子瑞萨电子株式会社 | Intersil | ||
600V,SMPSSeriesN-ChannelIGBT TheHGTD3N60A4SandtheHGTP3N60A4areMOSgatedhighvoltageswitchingdevicescombiningthebestfeaturesofMOSFETsandbipolartransistors.ThesedeviceshavethehighinputimpedanceofaMOSFETandthelowon-stateconductionlossofabipolartransistor.Themuchloweronstatevoltagedrop | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | Fairchild | ||
600V,SMPSSeriesN-ChannelIGBT TheHGTD3N60A4SandtheHGTP3N60A4areMOSgatedhighvoltageswitchingdevicescombiningthebestfeaturesofMOSFETsandbipolartransistors.ThesedeviceshavethehighinputimpedanceofaMOSFETandthelowon-stateconductionlossofabipolartransistor.Themuchloweronstatevoltagedrop | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | Fairchild | ||
600V,SMPSSeriesN-ChannelIGBT TheHGTD3N60A4SandtheHGTP3N60A4areMOSgatedhighvoltageswitchingdevicescombiningthebestfeaturesofMOSFETsandbipolartransistors.ThesedeviceshavethehighinputimpedanceofaMOSFETandthelowon-stateconductionlossofabipolartransistor.Themuchloweronstatevoltagedrop | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | Fairchild | ||
600V,SMPSSeriesN-ChannelIGBT TheHGTD3N60A4S,HGT1S3N60A4SandtheHGTP3N60A4areMOSgatedhighvoltageswitchingdevicescombiningthebestfeaturesofMOSFETsandbipolartransistors.ThesedeviceshavethehighinputimpedanceofaMOSFETandthelowon-stateconductionlossofabipolartransistor.Themuchloweron-stat | IntersilIntersil Corporation 瑞萨电子瑞萨电子株式会社 | Intersil | ||
600V,SMPSSeriesN-ChannelIGBTwithAnti-ParallelHyperfastDiode TheHGT1S3N60A4DSandtheHGTP3N60A4DareMOSgatedhighvoltageswitchingdevicescombiningthebestfeaturesofMOSFETsandbipolartransistors.ThesedeviceshavethehighinputimpedanceofaMOSFETandthelowon-stateconductionlossofabipolartransistor.Themuchloweron-statevoltaged | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | Fairchild | ||
600V,SMPSSeriesN-ChannelIGBT TheHGTD3N60A4SandtheHGTP3N60A4areMOSgatedhighvoltageswitchingdevicescombiningthebestfeaturesofMOSFETsandbipolartransistors.ThesedeviceshavethehighinputimpedanceofaMOSFETandthelowon-stateconductionlossofabipolartransistor.Themuchloweronstatevoltagedrop | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | Fairchild | ||
600V,SMPSSeriesN-ChannelIGBT TheHGTD3N60A4S,HGT1S3N60A4SandtheHGTP3N60A4areMOSgatedhighvoltageswitchingdevicescombiningthebestfeaturesofMOSFETsandbipolartransistors.ThesedeviceshavethehighinputimpedanceofaMOSFETandthelowon-stateconductionlossofabipolartransistor.Themuchloweron-stat | IntersilIntersil Corporation 瑞萨电子瑞萨电子株式会社 | Intersil |
产品属性
- 产品编号:
HGTP3N60A4D
- 制造商:
onsemi
- 类别:
分立半导体产品 > 晶体管 - UGBT、MOSFET - 单
- 包装:
管件
- 不同 Vge、Ic 时 Vce(on)(最大值):
2.7V @ 15V,3A
- 开关能量:
37µJ(开),25µJ(关)
- 输入类型:
标准
- 25°C 时 Td(开/关)值:
6ns/73ns
- 测试条件:
390V,3A,50 欧姆,15V
- 工作温度:
-55°C ~ 150°C(TJ)
- 安装类型:
通孔
- 封装/外壳:
TO-220-3
- 供应商器件封装:
TO-220-3
- 描述:
IGBT 600V 17A 70W TO220AB
供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
---|---|---|---|---|---|---|---|
FAIRCHIL |
08+(pbfree) |
TO-220 |
8866 |
询价 | |||
FAIRCHILD |
23+ |
TO-220 |
9526 |
询价 | |||
INF |
16+ |
TO-220 |
10000 |
全新原装现货 |
询价 | ||
仙童 |
05+ |
TO-220 |
5000 |
原装进口 |
询价 | ||
INF |
2020+ |
TO-220 |
350000 |
100%进口原装正品公司现货库存 |
询价 | ||
FAIRCHILD |
23+ |
NA |
19960 |
只做进口原装,终端工厂免费送样 |
询价 | ||
23+ |
N/A |
90250 |
正品授权货源可靠 |
询价 | |||
FSC/ON |
23+ |
原包装原封 □□ |
30794 |
原装进口特价供应 QQ 1304306553 更多详细咨询 库存 |
询价 | ||
FAIRCHIL |
23+ |
TO-TO-220 |
12300 |
全新原装真实库存含13点增值税票! |
询价 | ||
仙童/INTERSI |
2023+ |
TO-220 |
80000 |
一级代理/分销渠道价格优势 十年芯程一路只做原装正品 |
询价 |
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