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HGTP3N60A4D

600V, SMPS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode

TheHGT1S3N60A4DSandtheHGTP3N60A4DareMOSgatedhighvoltageswitchingdevicescombiningthebestfeaturesofMOSFETsandbipolartransistors.ThesedeviceshavethehighinputimpedanceofaMOSFETandthelowon-stateconductionlossofabipolartransistor.Themuchloweron-statevoltaged

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

HGTP3N60A4D

600V, SMPS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode

TheHGT1S3N60A4DSandtheHGTP3N60A4DareMOSgatedhighvoltageswitchingdevicescombiningthebestfeaturesofMOSFETsandbipolartransistors.ThesedeviceshavethehighinputimpedanceofaMOSFETandthelowon-stateconductionlossofabipolartransistor.Themuchloweron-statevoltaged

IntersilIntersil Corporation

瑞萨电子瑞萨电子株式会社

HGTP3N60A4D

包装:管件 封装/外壳:TO-220-3 类别:分立半导体产品 晶体管 - UGBT、MOSFET - 单 描述:IGBT 600V 17A 70W TO220AB

ONSEMION Semiconductor

安森美半导体安森美半导体公司

HGTP3N60A4D9A

600V, SMPS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode

TheHGT1S3N60A4DSandtheHGTP3N60A4DareMOSgatedhighvoltageswitchingdevicescombiningthebestfeaturesofMOSFETsandbipolartransistors.ThesedeviceshavethehighinputimpedanceofaMOSFETandthelowon-stateconductionlossofabipolartransistor.Themuchloweron-statevoltaged

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

3N60A4

600V,SMPSSeriesN-ChannelIGBT

TheHGTD3N60A4S,HGT1S3N60A4SandtheHGTP3N60A4areMOSgatedhighvoltageswitchingdevicescombiningthebestfeaturesofMOSFETsandbipolartransistors.ThesedeviceshavethehighinputimpedanceofaMOSFETandthelowon-stateconductionlossofabipolartransistor.Themuchloweron-stat

IntersilIntersil Corporation

瑞萨电子瑞萨电子株式会社

3N60A4

600V,SMPSSeriesN-ChannelIGBT

TheHGTD3N60A4SandtheHGTP3N60A4areMOSgatedhighvoltageswitchingdevicescombiningthebestfeaturesofMOSFETsandbipolartransistors.ThesedeviceshavethehighinputimpedanceofaMOSFETandthelowon-stateconductionlossofabipolartransistor.Themuchloweronstatevoltagedrop

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

HGTD3N60A4

600V,SMPSSeriesN-ChannelIGBT

TheHGTD3N60A4SandtheHGTP3N60A4areMOSgatedhighvoltageswitchingdevicescombiningthebestfeaturesofMOSFETsandbipolartransistors.ThesedeviceshavethehighinputimpedanceofaMOSFETandthelowon-stateconductionlossofabipolartransistor.Themuchloweronstatevoltagedrop

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

HGTD3N60A4S

600V,SMPSSeriesN-ChannelIGBT

TheHGTD3N60A4SandtheHGTP3N60A4areMOSgatedhighvoltageswitchingdevicescombiningthebestfeaturesofMOSFETsandbipolartransistors.ThesedeviceshavethehighinputimpedanceofaMOSFETandthelowon-stateconductionlossofabipolartransistor.Themuchloweronstatevoltagedrop

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

HGTD3N60A4S

600V,SMPSSeriesN-ChannelIGBT

TheHGTD3N60A4S,HGT1S3N60A4SandtheHGTP3N60A4areMOSgatedhighvoltageswitchingdevicescombiningthebestfeaturesofMOSFETsandbipolartransistors.ThesedeviceshavethehighinputimpedanceofaMOSFETandthelowon-stateconductionlossofabipolartransistor.Themuchloweron-stat

IntersilIntersil Corporation

瑞萨电子瑞萨电子株式会社

HGTP3N60A4

600V,SMPSSeriesN-ChannelIGBTwithAnti-ParallelHyperfastDiode

TheHGT1S3N60A4DSandtheHGTP3N60A4DareMOSgatedhighvoltageswitchingdevicescombiningthebestfeaturesofMOSFETsandbipolartransistors.ThesedeviceshavethehighinputimpedanceofaMOSFETandthelowon-stateconductionlossofabipolartransistor.Themuchloweron-statevoltaged

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

HGTP3N60A4

600V,SMPSSeriesN-ChannelIGBT

TheHGTD3N60A4SandtheHGTP3N60A4areMOSgatedhighvoltageswitchingdevicescombiningthebestfeaturesofMOSFETsandbipolartransistors.ThesedeviceshavethehighinputimpedanceofaMOSFETandthelowon-stateconductionlossofabipolartransistor.Themuchloweronstatevoltagedrop

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

HGTP3N60A4

600V,SMPSSeriesN-ChannelIGBT

TheHGTD3N60A4S,HGT1S3N60A4SandtheHGTP3N60A4areMOSgatedhighvoltageswitchingdevicescombiningthebestfeaturesofMOSFETsandbipolartransistors.ThesedeviceshavethehighinputimpedanceofaMOSFETandthelowon-stateconductionlossofabipolartransistor.Themuchloweron-stat

IntersilIntersil Corporation

瑞萨电子瑞萨电子株式会社

产品属性

  • 产品编号:

    HGTP3N60A4D

  • 制造商:

    onsemi

  • 类别:

    分立半导体产品 > 晶体管 - UGBT、MOSFET - 单

  • 包装:

    管件

  • 不同 Vge、Ic 时 Vce(on)(最大值):

    2.7V @ 15V,3A

  • 开关能量:

    37µJ(开),25µJ(关)

  • 输入类型:

    标准

  • 25°C 时 Td(开/关)值:

    6ns/73ns

  • 测试条件:

    390V,3A,50 欧姆,15V

  • 工作温度:

    -55°C ~ 150°C(TJ)

  • 安装类型:

    通孔

  • 封装/外壳:

    TO-220-3

  • 供应商器件封装:

    TO-220-3

  • 描述:

    IGBT 600V 17A 70W TO220AB

供应商型号品牌批号封装库存备注价格
FAIRCHIL
08+(pbfree)
TO-220
8866
询价
FAIRCHILD
23+
TO-220
9526
询价
INF
16+
TO-220
10000
全新原装现货
询价
仙童
05+
TO-220
5000
原装进口
询价
INF
2020+
TO-220
350000
100%进口原装正品公司现货库存
询价
FAIRCHILD
23+
NA
19960
只做进口原装,终端工厂免费送样
询价
23+
N/A
90250
正品授权货源可靠
询价
FSC/ON
23+
原包装原封 □□
30794
原装进口特价供应 QQ 1304306553 更多详细咨询 库存
询价
FAIRCHIL
23+
TO-TO-220
12300
全新原装真实库存含13点增值税票!
询价
仙童/INTERSI
2023+
TO-220
80000
一级代理/分销渠道价格优势 十年芯程一路只做原装正品
询价
更多HGTP3N60A4D供应商 更新时间2024-4-29 16:30:00