首页 >HGTP7N60A4>规格书列表
| 零件编号 | 下载&订购 | 功能描述 | 制造商&上传企业 | LOGO |
|---|---|---|---|---|
HGTP7N60A4 | 600V, SMPS Series N-Channel IGBT TheHGT1S7N60A4S9A,HGTG7N60A4andHGTP7N60A4areMOSgatedhighvoltageswitchingdevicescombiningthebestfeaturesofMOSFETsandbipolartransistors.ThesedeviceshavethehighinputimpedanceofaMOSFETandthelowon-stateconductionlossofabipolartransistor.Themuchloweron-statev | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | Fairchild | |
HGTP7N60A4 | 600V, SMPS Series N-Channel IGBT TheHGTD7N60A4S,HGT1S7N60A4S,HGTG7N60A4andHGTP7N60A4areMOSgatedhighvoltageswitchingdevicescombiningthebestfeaturesofMOSFETsandbipolartransistors.ThesedeviceshavethehighinputimpedanceofaMOSFETandthelowon-stateconductionlossofabipolartransistor.Themuchlower | IntersilIntersil Corporation 瑞萨电子瑞萨电子株式会社 | Intersil | |
HGTP7N60A4 | 600V, SMPS Series N-Channel IGBT | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | Fairchild | |
HGTP7N60A4 | 包装：管件 封装/外壳：TO-220-3 类别：分立半导体产品 晶体管 - UGBT、MOSFET - 单 描述：IGBT 600V 34A TO220-3 | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | ONSEMI | |
600V, SMPS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode TheHGTG7N60A4D,HGTP7N60A4DandHGT1S7N60A4DSareMOSgatedhighvoltageswitchingdevicescombiningthebestfeaturesofMOSFETsandbipolartransistors.ThesedeviceshavethehighinputimpedanceofaMOSFETandthelowon-stateconductionlossofabipolartransistor.Themuchloweron-state | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | Fairchild | ||
600V, SMPS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode TheHGTG7N60A4D,HGTP7N60A4DandHGT1S7N60A4DSareMOSgatedhighvoltageswitchingdevicescombiningthebestfeaturesofMOSFETsandbipolartransistors.ThesedeviceshavethehighinputimpedanceofaMOSFETandthelowon-stateconductionlossofabipolartransistor.Themuchloweron-state | IntersilIntersil Corporation 瑞萨电子瑞萨电子株式会社 | Intersil | ||
600V, SMPS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | Fairchild | ||
包装：管件 封装/外壳：TO-220-3 类别：分立半导体产品 晶体管 - UGBT、MOSFET - 单 描述：IGBT 600V 34A 125W TO220AB | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | ONSEMI | ||
包装：管件 封装/外壳：TO-220-3 类别：分立半导体产品 晶体管 - UGBT、MOSFET - 单 描述：IGBT 600V 34A TO220-3 | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | ONSEMI | ||
600V,SMPSSeriesN-ChannelIGBT | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | Fairchild | ||
600V,SMPSSeriesN-ChannelIGBT TheHGT1S7N60A4S9A,HGTG7N60A4andHGTP7N60A4areMOSgatedhighvoltageswitchingdevicescombiningthebestfeaturesofMOSFETsandbipolartransistors.ThesedeviceshavethehighinputimpedanceofaMOSFETandthelowon-stateconductionlossofabipolartransistor.Themuchloweron-statev | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | Fairchild | ||
600V,SMPSSeriesN-ChannelIGBT TheHGTD7N60A4S,HGT1S7N60A4S,HGTG7N60A4andHGTP7N60A4areMOSgatedhighvoltageswitchingdevicescombiningthebestfeaturesofMOSFETsandbipolartransistors.ThesedeviceshavethehighinputimpedanceofaMOSFETandthelowon-stateconductionlossofabipolartransistor.Themuchlower | IntersilIntersil Corporation 瑞萨电子瑞萨电子株式会社 | Intersil | ||
600V,SMPSSeriesN-ChannelIGBTwithAnti-ParallelHyperfastDiode | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | Fairchild | ||
600V,SMPSSeriesN-ChannelIGBT TheHGTD7N60A4S,HGT1S7N60A4S,HGTG7N60A4andHGTP7N60A4areMOSgatedhighvoltageswitchingdevicescombiningthebestfeaturesofMOSFETsandbipolartransistors.ThesedeviceshavethehighinputimpedanceofaMOSFETandthelowon-stateconductionlossofabipolartransistor.Themuchlower | IntersilIntersil Corporation 瑞萨电子瑞萨电子株式会社 | Intersil | ||
600V,SMPSSeriesN-ChannelIGBT | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | Fairchild | ||
600V,SMPSSeriesN-ChannelIGBT TheHGT1S7N60A4S9A,HGTG7N60A4andHGTP7N60A4areMOSgatedhighvoltageswitchingdevicescombiningthebestfeaturesofMOSFETsandbipolartransistors.ThesedeviceshavethehighinputimpedanceofaMOSFETandthelowon-stateconductionlossofabipolartransistor.Themuchloweron-statev | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | Fairchild | ||
600V,SMPSSeriesN-ChannelIGBT TheHGTD7N60A4S,HGT1S7N60A4S,HGTG7N60A4andHGTP7N60A4areMOSgatedhighvoltageswitchingdevicescombiningthebestfeaturesofMOSFETsandbipolartransistors.ThesedeviceshavethehighinputimpedanceofaMOSFETandthelowon-stateconductionlossofabipolartransistor.Themuchlower | IntersilIntersil Corporation 瑞萨电子瑞萨电子株式会社 | Intersil | ||
600V,SMPSSeriesN-ChannelIGBTwithAnti-ParallelHyperfastDiode TheHGTG7N60A4D,HGTP7N60A4DandHGT1S7N60A4DSareMOSgatedhighvoltageswitchingdevicescombiningthebestfeaturesofMOSFETsandbipolartransistors.ThesedeviceshavethehighinputimpedanceofaMOSFETandthelowon-stateconductionlossofabipolartransistor.Themuchloweron-state | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | Fairchild | ||
600V,SMPSSeriesN-ChannelIGBTwithAnti-ParallelHyperfastDiode TheHGTG7N60A4D,HGTP7N60A4DandHGT1S7N60A4DSareMOSgatedhighvoltageswitchingdevicescombiningthebestfeaturesofMOSFETsandbipolartransistors.ThesedeviceshavethehighinputimpedanceofaMOSFETandthelowon-stateconductionlossofabipolartransistor.Themuchloweron-state | IntersilIntersil Corporation 瑞萨电子瑞萨电子株式会社 | Intersil | ||
600V,SMPSSeriesN-ChannelIGBTwithAnti-ParallelHyperfastDiode | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | Fairchild |
产品属性
- 产品编号：
HGTP7N60A4
- 制造商：
onsemi
- 类别：
分立半导体产品 > 晶体管 - UGBT、MOSFET - 单
- 包装：
管件
- 不同 Vge、Ic 时 Vce(on)（最大值）：
2.7V @ 15V，7A
- 开关能量：
55µJ（开），60µJ（关）
- 输入类型：
标准
- 25°C 时 Td（开/关）值：
11ns/100ns
- 测试条件：
390V，7A，25 欧姆，15V
- 工作温度：
-55°C ~ 150°C（TJ）
- 安装类型：
通孔
- 封装/外壳：
TO-220-3
- 供应商器件封装：
TO-220-3
- 描述：
IGBT 600V 34A TO220-3
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
ON |
19+ |
TO-220 |
8675 |
询价 | |||
onsemi/安森美 |
新批次 |
TO-220 |
4500 |
询价 | |||
onsemi(安森美) |
23+ |
TO-220 |
942 |
原厂订货渠道,支持BOM配单一站式服务 |
询价 | ||
FSC |
2020+ |
TO-220 |
8000 |
只做自己库存,全新原装进口正品假一赔百,可开13%增 |
询价 | ||
FAIRCHILD/仙童 |
2021+ |
TO-220 |
3580 |
原装现货/15年行业经验欢迎询价 |
询价 | ||
ON/安森美 |
21+ |
TO-220 |
6000 |
原装正品 |
询价 | ||
FAIRCHILD/仙童 |
17+ |
TO-220 |
31518 |
原装正品 可含税交易 |
询价 | ||
ON/安森美 |
2021+ |
TO-220 |
9000 |
原装现货,随时欢迎询价 |
询价 | ||
INTERSIL |
05+ |
原厂原装 |
4320 |
只做全新原装真实现货供应 |
询价 | ||
FAIRCHILD |
23+ |
TO-220 |
9526 |
询价 |
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