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零件编号	下载&订购	功能描述	制造商&上传企业	LOGO
HGTP5N120CN	文件：80.54 Kbytes Page：7 Pages	25A, 1200V, NPT Series N-Channel IGBT TheHGTP5N120CNandHGT1S5N120CNSareNon-PunchThrough(NPT)IGBTdesigns.TheyarenewmembersoftheMOSgatedhighvoltageswitchingIGBTfamily.IGBTscombinethebestfeaturesofMOSFETsandbipolartransistors.ThisdevicehasthehighinputimpedanceofaMOSFETandthelowon-stateconduc	IntersilIntersil Corporation 瑞萨电子瑞萨电子株式会社	Intersil
HGTP5N120CND	文件：87.09 Kbytes Page：7 Pages	25A, 1200V, NPT Series N-Channel IGBT with Anti-Parallel Hyperfast Diode TheHGTG5N120CND,HGTP5N120CNDandHGT1S5N120CNDSareNon-PunchThrough(NPT)IGBTdesigns.TheyarenewmembersoftheMOSgatedhighvoltageswitchingIGBTfamily.IGBTscombinethebestfeaturesofMOSFETsandbipolartransistors.ThisdevicehasthehighinputimpedanceofaMOSFETandthelow	IntersilIntersil Corporation 瑞萨电子瑞萨电子株式会社	Intersil
5N120	文件：451.43 Kbytes Page：7 Pages	5A,1200VN-CHANNELPOWERMOSFET DESCRIPTION TheUTC5N120provideexcellentRDS(ON),lowgatecharge andoperationwithlowgatevoltages.Thisdeviceissuitablefor useasaloadswitchorinPWMapplications. FEATURES0 RDS(ON)≤3.1Ω@VGS=10V,ID=2.5A LowReverseTransferCapacitance *FastSwitchingCapabilit	UTCYoushun Technology Co., Ltd 友顺友顺科技股份有限公司	UTC
5N120BND	文件：216.81 Kbytes Page：8 Pages	21A,1200V,NPTSeriesN-ChannelIGBTswithAnti-ParallelHyperfastDiodes TheHGTG5N120BNDandHGTP5N120BNDareNon-PunchThrough(NPT)IGBTdesigns.TheyarenewmembersoftheMOSgatedhighvoltageswitchingIGBTfamily.IGBTscombinethebestfeaturesofMOSFETsandbipolartransistors.ThisdevicehasthehighinputimpedanceofaMOSFETandthelowon-stateconduc	FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司	Fairchild
5N120BND	文件：89.22 Kbytes Page：7 Pages	21A,1200V,NPTSeriesN-ChannelIGBTswithAnti-ParallelHyperfastDiodes TheHGTG5N120BN,HGTP5N120BND,andHGT1S5N120BNDSareNon-PunchThrough(NPT)IGBTdesigns.TheyarenewmembersoftheMOSgatedhighvoltageswitchingIGBTfamily.IGBTscombinethebestfeaturesofMOSFETsandbipolartransistors.ThisdevicehasthehighinputimpedanceofaMOSFETandthelow	IntersilIntersil Corporation 瑞萨电子瑞萨电子株式会社	Intersil
HGTG5N120BND	文件：89.22 Kbytes Page：7 Pages	21A,1200V,NPTSeriesN-ChannelIGBTswithAnti-ParallelHyperfastDiodes TheHGTG5N120BN,HGTP5N120BND,andHGT1S5N120BNDSareNon-PunchThrough(NPT)IGBTdesigns.TheyarenewmembersoftheMOSgatedhighvoltageswitchingIGBTfamily.IGBTscombinethebestfeaturesofMOSFETsandbipolartransistors.ThisdevicehasthehighinputimpedanceofaMOSFETandthelow	IntersilIntersil Corporation 瑞萨电子瑞萨电子株式会社	Intersil
HGTG5N120BND	文件：216.81 Kbytes Page：8 Pages	21A,1200V,NPTSeriesN-ChannelIGBTswithAnti-ParallelHyperfastDiodes TheHGTG5N120BNDandHGTP5N120BNDareNon-PunchThrough(NPT)IGBTdesigns.TheyarenewmembersoftheMOSgatedhighvoltageswitchingIGBTfamily.IGBTscombinethebestfeaturesofMOSFETsandbipolartransistors.ThisdevicehasthehighinputimpedanceofaMOSFETandthelowon-stateconduc	FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司	Fairchild
HGTG5N120CND	文件：87.09 Kbytes Page：7 Pages	25A,1200V,NPTSeriesN-ChannelIGBTwithAnti-ParallelHyperfastDiode TheHGTG5N120CND,HGTP5N120CNDandHGT1S5N120CNDSareNon-PunchThrough(NPT)IGBTdesigns.TheyarenewmembersoftheMOSgatedhighvoltageswitchingIGBTfamily.IGBTscombinethebestfeaturesofMOSFETsandbipolartransistors.ThisdevicehasthehighinputimpedanceofaMOSFETandthelow	IntersilIntersil Corporation 瑞萨电子瑞萨电子株式会社	Intersil
HGTP5N120	文件：89.22 Kbytes Page：7 Pages	21A,1200V,NPTSeriesN-ChannelIGBTswithAnti-ParallelHyperfastDiodes TheHGTG5N120BN,HGTP5N120BND,andHGT1S5N120BNDSareNon-PunchThrough(NPT)IGBTdesigns.TheyarenewmembersoftheMOSgatedhighvoltageswitchingIGBTfamily.IGBTscombinethebestfeaturesofMOSFETsandbipolartransistors.ThisdevicehasthehighinputimpedanceofaMOSFETandthelow	IntersilIntersil Corporation 瑞萨电子瑞萨电子株式会社	Intersil
HGTP5N120	文件：216.81 Kbytes Page：8 Pages	21A,1200V,NPTSeriesN-ChannelIGBTswithAnti-ParallelHyperfastDiodes TheHGTG5N120BNDandHGTP5N120BNDareNon-PunchThrough(NPT)IGBTdesigns.TheyarenewmembersoftheMOSgatedhighvoltageswitchingIGBTfamily.IGBTscombinethebestfeaturesofMOSFETsandbipolartransistors.ThisdevicehasthehighinputimpedanceofaMOSFETandthelowon-stateconduc	FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司	Fairchild
HGTP5N120BN	文件：82.52 Kbytes Page：7 Pages	21A,1200V,NPTSeriesN-ChannelIGBTs TheHGTP5N120BNandtheHGT1S5N120BNSareNon-PunchThrough(NPT)IGBTdesigns.TheyarenewmembersoftheMOSgatedhighvoltageswitchingIGBTfamily.IGBTscombinethebestfeaturesofMOSFETsandbipolartransistors.ThisdevicehasthehighinputimpedanceofaMOSFETandthelowon-stateco	IntersilIntersil Corporation 瑞萨电子瑞萨电子株式会社	Intersil
HGTP5N120BND	文件：89.22 Kbytes Page：7 Pages	21A,1200V,NPTSeriesN-ChannelIGBTswithAnti-ParallelHyperfastDiodes TheHGTG5N120BN,HGTP5N120BND,andHGT1S5N120BNDSareNon-PunchThrough(NPT)IGBTdesigns.TheyarenewmembersoftheMOSgatedhighvoltageswitchingIGBTfamily.IGBTscombinethebestfeaturesofMOSFETsandbipolartransistors.ThisdevicehasthehighinputimpedanceofaMOSFETandthelow	IntersilIntersil Corporation 瑞萨电子瑞萨电子株式会社	Intersil
HGTP5N120BND	文件：216.81 Kbytes Page：8 Pages	21A,1200V,NPTSeriesN-ChannelIGBTswithAnti-ParallelHyperfastDiodes TheHGTG5N120BNDandHGTP5N120BNDareNon-PunchThrough(NPT)IGBTdesigns.TheyarenewmembersoftheMOSgatedhighvoltageswitchingIGBTfamily.IGBTscombinethebestfeaturesofMOSFETsandbipolartransistors.ThisdevicehasthehighinputimpedanceofaMOSFETandthelowon-stateconduc	FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司	Fairchild
SGH5N120RUF	文件：464.69 Kbytes Page：7 Pages	ShortCircuitRatedIGBT GeneralDescription FairchildsRUFseriesofInsulatedGateBipolarTransistors(IGBTs)provideslowconductionandswitchinglossesaswellasshortcircuitruggedness.TheRUFseriesisdesignedforapplicationssuchasmotorcontrol,uninterruptedpowersupplies(UPS)andgeneralinverterswhe	FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司	Fairchild
SGH5N120RUFD	文件：513.9 Kbytes Page：8 Pages	ShortCircuitRatedIGBT GeneralDescription FairchildsRUFDseriesofInsulatedGateBipolarTransistors(IGBTs)provideslowconductionandswitchinglossesaswellasshortcircuitruggedness.TheRUFDseriesisdesignedforapplicationssuchasmotorcontrol,uninterruptedpowersupplies(UPS)andgeneralinvertersw	FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司	Fairchild
STP5N120	文件：186.55 Kbytes Page：10 Pages	N-channel1200V-2.8廓-4.4A-TO-220Zener-protectedSuperMESHTMPowerMOSFET	STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团	STMICROELECTRONICS
STP5N120	文件：296.1 Kbytes Page：2 Pages	iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent-ID=4.4A@TC=25℃ ·DrainSourceVoltage-VDSS=1200V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=3.5Ω(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.	ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司	ISC
UG5N120	文件：288.53 Kbytes Page：3 Pages	NPTN-CHANNELIGBTWITHANTI-PARALLELHYPERFASTDIODES	UTCYoushun Technology Co., Ltd 友顺友顺科技股份有限公司	UTC

详细参数

型号：
HGTP5N120CN
制造商：
Rochester Electronics LLC
功能描述：
- Bulk

供应商	型号	品牌	批号	封装	库存	备注	价格
深圳市昌和盛利电子有限公司	HGTP5N120CN	FAIRCHILD	23+	TO-220	9526		询价
深圳市星佑电子有限公司	HGTP5N120CN	INTERSIL	05+	原厂原装	5021	只做全新原装真实现货供应	询价
深圳市特顺芯科技有限公司	HGTP5N120CN	Intersil	08+(pbfree)	TO-220	8866		询价
深圳市百视威讯电子科技有限公司	HGTP5N120CN		23+	N/A	30050	正品授权货源可靠	询价
深圳市芯祺盛科技有限公司	HGTP5N120CN	FAIRCHILD/仙童	1801+	TO220	5960	原装正品-现货-绝对有货-实单价可谈	询价
深圳市正迈科技有限公司	HGTP5N120CN	FSC/ON	23+	原包装原封 □□	29600	原装进口特价供应 QQ 1304306553 更多详细咨询库存	询价
深圳市宏捷佳电子科技有限公司	HGTP5N120CN	INTERSIL	23+	TO-TO-220	12300	全新原装真实库存含13点增值税票!	询价
深圳市维尔达电子有限公司	HGTP5N120CN	INTERSIL	2023+	TO-220	80000	一级代理/分销渠道价格优势十年芯程一路只做原装正品	询价
深圳兆威电子有限公司	HGTP5N120CN	INTERSIL	23+	TO-220	90000	只做原厂渠道价格优势可提供技术支持	询价
艾睿国际（香港）有限公司	HGTP5N120CN	FAIRCHILD/仙童	2021+	TO220	100500	一级代理专营品牌!原装正品,优势现货,长期排单到货	询价

更多HGTP5N120CN供应商更新时间2024-5-15 17:24:00

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