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HGTP3N60A4D9A规格书详情
The HGT1S3N60A4DS and the HGTP3N60A4D are MOS gated high voltage switching devices combining the best features of MOSFETs and bipolar transistors. These devices have the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-state voltage drop varies only moderately between 25oC and 150oC. The IGBT used is the development type TA49327. The diode used in anti-parallel is the development type TA49369.
This IGBT is ideal for many high voltage switching applications operating at high frequencies where low conduction losses are essential.This device has been optimized for high frequency switch mode power supplies.
Features
• >100kHz Operation At 390V, 3A
• 200kHz Operation At 390V, 2.5A
• 600V Switching SOA Capability
• Typical Fall Time. . . . . . . . . . . . . . . . . 70ns at TJ = 125°C
• Low Conduction Loss
• Temperature Compensating SABER™ Model www.Fairchildsemi.com
产品属性
- 型号:
HGTP3N60A4D9A
- 制造商:
FAIRCHILD
- 制造商全称:
Fairchild Semiconductor
- 功能描述:
600V, SMPS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode
供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
---|---|---|---|---|---|---|---|
FAIRCHILD/仙童 |
24+ |
TO220 |
58000 |
全新原厂原装正品现货,可提供技术支持、样品免费! |
询价 | ||
FAIRCHILD/仙童 |
22+ |
TO220 |
50000 |
只做原装假一罚十,欢迎咨询 |
询价 | ||
INTERSIL |
23+ |
TO-220 |
6000 |
原装正品,支持实单 |
询价 | ||
FAIRCHILD/仙童 |
23+ |
TO-220 |
90000 |
只做原厂渠道价格优势可提供技术支持 |
询价 | ||
INTERSIL |
05+ |
原厂原装 |
4645 |
只做全新原装真实现货供应 |
询价 | ||
FAIRCHILD |
23+ |
TO-220 |
9526 |
询价 | |||
POWER INTEGRATIONS/帕沃英蒂格 |
2022+ |
原厂原封 |
57550 |
询价 | |||
FAIRCHILD |
2023+ |
SMD |
2400 |
安罗世纪电子只做原装正品货 |
询价 | ||
仙童/INTERSI |
2023+ |
TO-220 |
80000 |
一级代理/分销渠道价格优势 十年芯程一路只做原装正品 |
询价 | ||
FAIRCHILD/仙童 |
22+21+ |
TO220 |
13133 |
16年电子元件现货供应商 终端BOM表可配单提供样品 |
询价 |