首页 >爱普生晶振TSX-4025>规格书列表
| 零件编号 | 下载 订购 | 功能描述/丝印 | 制造商 上传企业 | LOGO |
|---|---|---|---|---|
Pulsegenerator | FESTOFesto Corporation. 费斯托 | FESTO | ||
low-loss,compact,andeconomicalsurface-acoustic-wave(SAW) | ACT Advanced Crystal Technology | ACT | ||
SAWFilter | ACT Advanced Crystal Technology | ACT | ||
ImplementingaGlucometerandBloodPressureMonitorMedicalDevices | freescaleFreescale Semiconductor, Inc 飞思卡尔飞思卡尔半导体 | freescale | ||
HighPerformanceIREnhancedP-Typesiliconp-i-nPhotodiodes Features OptimizedResponsivityforOperation at1064nm. GuardRingConstruction AntireflectionCoated HermeticallySealedPackage WideRangeofOperatingVoltage(0to-200V) Applications Nd:YAGLaserDetection OpticalCommunications IntrusionAlarmSystems ProcessControlInstrument | ETCList of Unclassifed Manufacturers 未分类制造商 | ETC | ||
iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent:ID=20A@TC=25℃ ·DrainSourceVoltage :VDSS=400V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.25Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC- | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ISC | ||
N-CHANNELENHANCEMENTMODEHIGHVOLTAGEPOWERMOSFETS POWERMOSIV® N-CHANNELENHANCEMENTMODEHIGHVOLTAGEPOWERMOSFETS | ADPOW Advanced Power Technology | ADPOW | ||
iscN-ChannelMOSFETTransistor DESCRIPTION ·DrainCurrent:ID=23A@TC=25℃ ·DrainSourceVoltage :VDSS=400V(Min) ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation APPLICATIONS ·highvoltage,highspeedpowerswitching | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ISC | ||
iscN-ChannelMOSFETTransistor DESCRIPTION ·DrainCurrent:ID=23A@TC=25℃ ·DrainSourceVoltage :VDSS=400V(Min) ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation APPLICATIONS ·highvoltage,highspeedpowerswitching | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ISC | ||
iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent:ID=21A@TC=25℃ ·DrainSourceVoltage :VDSS=400V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.25Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC- | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ISC |
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