首页 >ZXTN25100BFHTA二极管>规格书列表
| 零件编号 | 下载 订购 | 功能描述/丝印 | 制造商 上传企业 | LOGO |
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100V,SOT23,NPNmediumpowertransistor Description Advancedprocesscapabilityandpackagedesignhavebeenusedtomaximisethepowerhandlingandperformanceofthissmalloutlinetransistor.Thecompactsizeandratingsofthisdevicemakeitideallysuitedtoapplicationswherespaceisatapremium. Features •Highpowerdissip | Zetex Zetex Semiconductors | Zetex | ||
100V,SOT23,NPNmediumpowertransistor Description Advancedprocesscapabilityandpackagedesignhavebeenusedtomaximisethepowerhandlingandperformanceofthissmalloutlinetransistor.Thecompactsizeandratingsofthisdevicemakeitideallysuitedtoapplicationswherespaceisatapremium. Features •Highpowerdissip | DIODESDiodes Incorporated 美台半导体 | DIODES | ||
100V,SOT23,NPNmediumpowertransistor Description Advancedprocesscapabilityandpackagedesignhavebeenusedtomaximisethepowerhandlingandperformanceofthissmalloutlinetransistor.Thecompactsizeandratingsofthisdevicemakeitideallysuitedtoapplicationswherespaceisatapremium. Features •Highpowerdissip | Zetex Zetex Semiconductors | Zetex | ||
100V,SOT23,NPNmediumpowertransistor Description Advancedprocesscapabilityandpackagedesignhavebeenusedtomaximisethepowerhandlingandperformanceofthissmalloutlinetransistor.Thecompactsizeandratingsofthisdevicemakeitideallysuitedtoapplicationswherespaceisatapremium. Features •Highpowerdissip | DIODESDiodes Incorporated 美台半导体 | DIODES | ||
100VNPNhighgaintransistorinSOT223 Features •BVCEX>180V •BVCEO>100V •BVECO>6V •IC=3AHighContinuousCurrent •LowSaturationVoltageVCE(sat) | DIODESDiodes Incorporated 美台半导体 | DIODES | ||
100VNPNhighgaintransistor Description PackagedintheSOT223outlinethisnewlowsaturationNPNtransistoroffersextremelylowonstatelossesmakingitidealforuseinDC-DCcircuitsandvariousdrivingandpowermanagementfunctions. Features •HighpowerdissipationSOT223package •Highgain •Lowsaturationvo | Zetex Zetex Semiconductors | Zetex | ||
100VNPNhighgaintransistorinSOT223 Features •BVCEX>180V •BVCEO>100V •BVECO>6V •IC=3AHighContinuousCurrent •LowSaturationVoltageVCE(sat) | DIODESDiodes Incorporated 美台半导体 | DIODES | ||
100VNPNhighgaintransistorinSOT223 Features •BVCEX>180V •BVCEO>100V •BVECO>6V •IC=3AHighContinuousCurrent •LowSaturationVoltageVCE(sat) | DIODESDiodes Incorporated 美台半导体 | DIODES | ||
100VNPNhighgaintransistor Description PackagedintheSOT223outlinethisnewlowsaturationNPNtransistoroffersextremelylowonstatelossesmakingitidealforuseinDC-DCcircuitsandvariousdrivingandpowermanagementfunctions. Features •HighpowerdissipationSOT223package •Highgain •Lowsaturationvo | Zetex Zetex Semiconductors | Zetex | ||
100VNPNhighgaintransistorinSOT89 Features •BVCEO>100V •BVECO>6V •IC=2.5AContinuousCollectorCurrent •ICM=3.5APeakCollectorCurrent •VCE(SAT) | DIODESDiodes Incorporated 美台半导体 | DIODES |
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