60V DUAL N-CHANNEL SELF-PROTECTED ENHANCEMENT MODE IntelliFET MOSFET

Features  Compact High Power Dissipation Package  Low Input Current  Logic-Level Input (3.3V and 5V)  Short-Circuit Protection with Auto Restart  Overvoltage Protection (Active Clamp)  Thermal Shutdown with Auto Restart  Overcurrent Protection  Input Protection (ESD)  High Contin

文件：546.8 Kbytes 页数：9 Pages

DIODES

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丝印：6008DN8；Package：SO-8；60V DUAL N-CHANNEL SELF-PROTECTED ENHANCEMENT MODE IntelliFET MOSFET

Features  Compact High Power Dissipation Package  Low Input Current  Logic-Level Input (3.3V and 5V)  Short-Circuit Protection with Auto Restart  Overvoltage Protection (Active Clamp)  Thermal Shutdown with Auto Restart  Overcurrent Protection  Input Protection (ESD)  High Contin

文件：546.8 Kbytes 页数：9 Pages

DIODES

美台半导体

60V Dual N-Channel Self-Protected Enhancement Mode IntelliFET MOSFET

The ZXMS6008DN8Q is a dual self-protected low-side IntelliFET? MOSFET with logic-level input. It integrates overtemperature, overcurrent, overvoltage (active clamp) and ESD protected logic-level functionality. The ZXMS6008DN8Q is ideal as a general-purpose switch driven from 3.3V or 5V microcontroll

Diodes

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16-SSOP

DIODES

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上传：深圳市佳斯泰科技有限公司

SMD

DIODES

美台半导体

上传：深圳市慧拓科技有限公司