ZXGD3109N8中文资料SYNCHRONOUS MOSFET CONTROLLER数据手册Diodes规格书

描述 Description

The ZXGD3109N8 is intended to drive a MOSFET configured as an ideal diode replacement. The device is comprised of a high voltage detector stage and gate driver. The detector monitors the voltage between the drain and the source of the MOSFET and if this voltage is less than the turn on threshold voltage of the controller a positive voltage is applied to the MOSFET’s Gate pin. As the load current decays to zero and the voltage between the drain and source of the MOSFET increases beyond the turn off threshold value MOSFET is rapidly turned off.
Intelligent features of this IC are the Minimum off time (TOFF) and Minimum on time (TON), these features blanks the noise generated during the turn on and turn off instances of the power FET. Light load detection (LLD) for improved efficiency at light and no load, where synchronous rectification is no more beneficial. Other features include, under voltage lock out (UVLO) and low turn off threshold voltage for improved efficiency.

特性 Features

Frequency of Operation up to 500kHz
Suitable for Discontinuous (DCM) and Critical (CrCM) Conduction Mode
Minimum On-Time and Off-Time to Reduce Turn-On/Off Oscillations
Intelligent Light Load Detection and Sleep Mode
Turn-Off Propagation Delay Time of 30ns Typically
Drain Voltage Rating of 200V
Recommended Operating Voltage from 4.5V up to 12V
Source and Sink Current of 2A and 4A Respectively
Low Component Count

应用 Application

Flyback Converters in:

Power Adaptors
Auxiliary Power Supplies
PoE Power Devices

Resonant Converters in:

High Power Adaptors
85+/90+ Compliant ATX and Server Power Supplies

简介

ZXGD3109N8属于集成电路（IC）的栅极驱动器。由制造生产的ZXGD3109N8栅极驱动器栅极驱动器电源管理集成电路 (PMIC) 可用于提供隔离、放大、参考位移、自举或其他必要功能，这些功能可将来自电源转换应用中控制设备的信号连接到电源被控制通过的半导体设备（通常为 FET 或 IGBT）。任何特定设备提供的确切功能各不相同，但与它适合驱动的半导体配置相关。