丝印：ZTA06；Package：SOT-223；SOT-223 Plastic-Encapsulate Transistors

FEATURES Low Voltage and High Current General Purpose Amplifier Applications

文件：1.81454 Mbytes 页数：4 Pages

DGNJDZ

南晶电子

丝印：ZTA42；Package：SOT-223；SOT-223 Plastic-Encapsulate Transistors

FEATURES · High breakdown voltage ·Low collector-emitter saturation voltage ·Complementary type: PZTA92(PNP)

文件：1.77036 Mbytes 页数：4 Pages

DGNJDZ

南晶电子

丝印：ZTA42；Package：SOT-223；Plastic-Encapsulate Transistors

FEATURES · High breakdown voltage ·Low collector-emitter saturation voltage ·Complementary type: PZTA92(PNP)

文件：784.94 Kbytes 页数：3 Pages

GWSEMI

唯圣电子

丝印：ZTA42；Package：SOT-223；TRANSISTOR (NPN)

TRANSISTOR (NPN) FEATURES • High breakdown voltage • Low collector-emitter saturation voltage • Complementary type: PZTA92(PNP)

文件：345.07 Kbytes 页数：3 Pages

FS

丝印：ZTA42；Package：SC-73；NPN high voltage transistor

1. General description NPN high-voltage transistor in a SOT223 Surface-Mounted Device (SMD) plastic package. PNP complement: PZTA92-Q 2. Features and benefits • Low current (max. 100 mA) • High voltage (max. 300 V) • Qualified according to AEC-Q101 and recommended for use in automotive app

文件：186.87 Kbytes 页数：7 Pages

NEXPERIA

安世

丝印：ZTA44；Package：SOT-223；SOT-223 Plastic-Encapsulate Transistors

FEATURES Low current : 300mA(max) High voltage: VCEO=400V

文件：1.76064 Mbytes 页数：4 Pages

DGNJDZ

南晶电子

丝印：ZTA44；Package：SOT-223；NPN TRANSISTOR

NPN TRANSISTOR FEATURES ● Low current : 300mA(max) ● High voltage: VCEO=400V

文件：313.15 Kbytes 页数：3 Pages

FS

丝印：ZTA56；Package：SOT-223；SOT-223 Plastic-Encapsulate Transistors

FEATURES Low Voltage and High Current General Purpose Amplifier Applications

文件：1.79591 Mbytes 页数：4 Pages

DGNJDZ

南晶电子

丝印：ZTA92；Package：SOT-223；SOT-223 Plastic-Encapsulate Transistors

FEATURES High Voltage Driver Applications

文件：1.8475 Mbytes 页数：4 Pages

DGNJDZ

南晶电子

丝印：ZTA92；Package：SOT-223；TRANSISTOR (PNP)

TRANSISTOR (PNP) FEATURES ● High Voltage Driver Applications

文件：335.61 Kbytes 页数：3 Pages

FS