NPN General Purpose Amplifier

Features • This device is designed for general-purpose amplifier applications at collector currents to 300 mA. • Sourced from process 12.

文件：149.53 Kbytes 页数：4 Pages

Fairchild

仙童半导体

NPN general purpose transistor

DESCRIPTION NPN transistor in a SOT223 plastic package. PNP complement: PZTA56. FEATURES • High current (max. 500 mA) • Low voltage (max. 80 V). APPLICATIONS • Medium power switching in e.g. telephony and professional communication.

文件：50.38 Kbytes 页数：8 Pages

PHI

飞利浦

S OT-223 Plastic-Encapsulate Transistors

TRANSISTOR (NPN) FEATURES ● Low Voltage and High Current ● General Purpose Amplifier Applications

文件：1.52232 Mbytes 页数：4 Pages

JIANGSU

长电科技

丝印：ZTA06；Package：SOT-223；SOT-223 Plastic-Encapsulate Transistors

FEATURES Low Voltage and High Current General Purpose Amplifier Applications

文件：1.81454 Mbytes 页数：4 Pages

DGNJDZ

南晶电子

NPN General Purpose Amplifier

文件：654.8 Kbytes 页数：15 Pages

Fairchild

仙童半导体

AMPLIFIER TRANSISTOR

FEATURES * Collector-Emitter Voltage: VCEO=80V * Collector Dissipation: PD=350mW

文件：124.7 Kbytes 页数：3 Pages

UTC

友顺

Bipolar Transistor

Collector-Emitter Voltage: VCEO=80VCollector Dissipation: PD=350Mw;

UTC

友顺

NPN 通用放大器

NPN通用放大器 该器件设计用于集电极电流达到300 mA的通用放大器应用。 采用工艺33设计。

ONSEMI

安森美半导体

晶体管

JSCJ

长晶科技

Package：TO-261-4，TO-261AA；包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 类别：分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个 描述：TRANS NPN 80V 0.5A SOT223-4

ONSEMI

安森美半导体