首页 >ZPY110(1W110V)>规格书列表
| 零件编号 | 下载 订购 | 功能描述/丝印 | 制造商 上传企业 | LOGO |
|---|---|---|---|---|
SiliconPowerZ-Diodes SiliconPowerZ-Diodes(non-planartechnology) •Maximumpowerdissipation1.3W •NominalZ-voltage10...200V •PlasticcaseDO-41 •Weightapprox.0.4g •PlasticmaterialhasULclassification94V-0 •St | DiotecDiotec Semiconductor 德欧泰克 | Diotec | ||
1WATTSURFACEMOUNTZENERDIODE FEATURES ●PLASTICPACKAGEHASUNDERWRITERSLABORATORY FLAMMABILITYCLASSIFICATION94V-0 ●LOWZENERIMPEDANCE ●EXCELLENTCLAMPINGCAPABILITY MECHANICALDATA ●CASE：MOLDEDPLASTIC ●TERMINALS：SOLDERPLATED ●POLARITY：INDICATEDBYCATHODEBAND ●WEIGHT：0.10GRAMS | FORMOSAFormosa MS 美丽微半导体美丽微半导体股份有限公司 | FORMOSA | ||
1WATTSURFACEMOUNTZENERDIODE | FRONTIER Frontier Electronics | FRONTIER | ||
NewCharacterizedControlValveWeatherShield | BELIMO BELIMO AIRCONTROLS (USA), INC | BELIMO | ||
N-CHANNELENHANCEMENTMODEVERTICALDMOSFET FEATURES *100VoltVDS *RDS(on)=3Ω *Lowthresholdvoltage | DIODESDiodes Incorporated 美台半导体 | DIODES | ||
N-CHANNELENHANCEMENTMODEVERTICALDMOSFET FEATURES *100VoltVDS *RDS(on)=3Ω *Lowthresholdvoltage | Zetex Zetex Semiconductors | Zetex | ||
N-CHANNELENHANCEMENTMODELOWTHRESHOLDVERTICALDMOSFET FEATURES *LOWRDS(ON)-3Ω | Zetex Zetex Semiconductors | Zetex | ||
SOT223N-CHANNELENHANCEMENTMODELOWTHRESHOLDVERTICALDMOSFET Description ThisnewgenerationMOSFETisdesignedtominimizetheon-stateresistance(RDS(ON))andyetmaintainsuperiorswitchingperformance,makingitidealforhighefficiencypowermanagementapplications. FeaturesandBenefits •LowOn-Resistance •LowInputCapacitance •FastSwitchi | DIODESDiodes Incorporated 美台半导体 | DIODES | ||
N-Channel100-V(D-S)MOSFET | VBSEMIVBsemi Electronics Co.,Ltd 微碧半导体微碧半导体（台湾）有限公司 | VBSEMI | ||
Silicon-Power-Z-Diodes(non-planartechnology) Silicon-Power-Z-Diodes(non-planartechnology) •Maximumpowerdissipation12.5W •NominalZ-voltage10...200V •MetalcaseDO-4 •Weightapprox.5.5g •Standardpolarity:Cathodetos | DiotecDiotec Semiconductor 德欧泰克 | Diotec |
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