| 零件编号 | 下载&订购 | 功能描述 | 制造商&上传企业 | LOGO |
|---|---|---|---|---|
ZN-A4105 | 包装：散装 类别：传感器，变送器 颗粒、灰尘传感器 描述：AIR CLEAN UNIT | Omron Automation and SafetyOmron Automation and Safety 欧姆龙自动化 |  | |
RelampableSocket | VCC Visual Communications Company |  | ||
trueone-port,surface-acoustic-wave(SAW)resonator | ACTAdvanced Crystal Technology 先进的晶体先进的晶体技术 |  | ||
DesignConsiderationsforSwitchedModePowerSuppliesUsingAFairchildPowerSwitch(FPS)inaFlybackConverter Introduction Flybackswitchedmodepowersupplies(SMPS)areamongthemostfrequentlyusedpowercircuitsinhouseholdandconsumerelectronics.ThebasicfunctionofanSMPSistosupplyregulatedpowertotheloadonthesecondary,oroutputside.AnSMPStypicallyincorporatesapowertransfo | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 |  | ||
AdvancedPlanarTechnologyLowOn-Resistance | IRFInternational Rectifier 英飞凌英飞凌科技公司 |  | ||
AdvancedPlanarTechnology Description FifthGenerationHEXFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachievethelowestpossibleon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETPowerMOSFETsarewellknownfor,p | KERSEMI Kersemi Electronic Co., Ltd. |  | ||
AdvancedPlanarTechnology AUTOMOTIVEGRADE Description SpecificallydesignedforAutomotiveapplications,thiscellulardesignofHEXFET®PowerMOSFETsutilizesthelatestprocessingtechniquestoachievelowon-resistancepersiliconarea.Thisbenefitcombinedwiththefastswitchingspeedandruggedizeddevicedesign | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 |  | ||
AdvancedPlanarTechnologyLowOn-Resistance | IRFInternational Rectifier 英飞凌英飞凌科技公司 | | ||
AdvancedPlanarTechnologyLowOn-Resistance | IRFInternational Rectifier 英飞凌英飞凌科技公司 | | ||
AdvancedPlanarTechnologyLowOn-Resistance | IRFInternational Rectifier 英飞凌英飞凌科技公司 | | ||
AUTOMOTIVEGRADE Description SpecificallydesignedforAutomotiveapplications,thiMOSFETutilizesthelatestprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Additionalfeaturesofthisdesignarea175°Cjunctionoperatingtemperature,fastswitchingspeedandimprovedrepetitive | KERSEMI Kersemi Electronic Co., Ltd. | | ||
AUTOMOTIVEGRADE Description SpecificallydesignedforAutomotiveapplications,thisHEXFET®PowerMOSFETutilizesthelatestprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Additionalfeaturesofthisdesignarea175°Cjunctionoperatingtemperature,fastswitchingspeedandimpro | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 | | ||
HEXFET짰PowerMOSFET Description SpecificallydesignedforAutomotiveapplications,thisHEXFET®PowerMOSFETutilizesthelatestprocessingtechniquestoachieveextremelylowonresistancepersiliconarea.Additionalfeaturesofthisdesignarea175°Cjunctionoperatingtemperature,fastswitchingspeedandimpro | IRFInternational Rectifier 英飞凌英飞凌科技公司 | | ||
HEXFET짰PowerMOSFET Description SpecificallydesignedforAutomotiveapplications,thisHEXFET®PowerMOSFETutilizesthelatestprocessingtechniquestoachieveextremelylowonresistancepersiliconarea.Additionalfeaturesofthisdesignarea175°Cjunctionoperatingtemperature,fastswitchingspeedandimpro | IRFInternational Rectifier 英飞凌英飞凌科技公司 | | ||
HEXFET짰PowerMOSFET Description SpecificallydesignedforAutomotiveapplications,thisHEXFET®PowerMOSFETutilizesthelatestprocessingtechniquestoachieveextremelylowonresistancepersiliconarea.Additionalfeaturesofthisdesignarea175°Cjunctionoperatingtemperature,fastswitchingspeedandimpro | IRFInternational Rectifier 英飞凌英飞凌科技公司 | | ||
AUTOMOTIVEGRADE Description SpecificallydesignedforAutomotiveapplications,thisHEXFET®PowerMOSFETutilizesthelatestprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Additionalfeaturesofthisdesignarea175°Cjunctionoperatingtemperature,fastswitchingspeedandimpro | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 | | ||
HEXFET짰PowerMOSFET Description SpecificallydesignedforAutomotiveapplications,thisHEXFET®PowerMOSFETutilizesthelatestprocessingtechniquestoachieveextremelylowonresistancepersiliconarea.Additionalfeaturesofthisdesignarea175°Cjunctionoperatingtemperature,fastswitchingspeedandimpro | IRFInternational Rectifier 英飞凌英飞凌科技公司 | | ||
HEXFET짰PowerMOSFET Description SpecificallydesignedforAutomotiveapplications,thisHEXFET®PowerMOSFETutilizesthelatestprocessingtechniquestoachieveextremelylowonresistancepersiliconarea.Additionalfeaturesofthisdesignarea175°Cjunctionoperatingtemperature,fastswitchingspeedandimpro | IRFInternational Rectifier 英飞凌英飞凌科技公司 | | ||
AUTOMOTIVEGRADE Description SpecificallydesignedforAutomotiveapplications,thisHEXFET®PowerMOSFETutilizesthelatestprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Additionalfeaturesofthisdesignarea175°Cjunctionoperatingtemperature,fastswitchingspeedandimpro | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 | | ||
AUTOMOTIVEGRADE Description SpecificallydesignedforAutomotiveapplications,thiMOSFETutilizesthelatestprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Additionalfeaturesofthisdesignarea175°Cjunctionoperatingtemperature,fastswitchingspeedandimprovedrepetitive | KERSEMI Kersemi Electronic Co., Ltd. | |
产品属性
- 产品编号：
ZN-A4105
- 制造商：
Omron Automation and Safety
- 类别：
传感器，变送器 > 颗粒、灰尘传感器
- 系列：
ZN
- 包装：
散装
- 输出类型：
电压
- 电压 - 供电：
24V
- 安装类型：
底座安装
- 工作温度：
0°C ~ 40°C
- 描述：
AIR CLEAN UNIT
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
OMRON |
20+ |
传感器 |
16 |
就找我吧!--邀您体验愉快问购元件! |
询价 | ||
欧姆龙 |
22+ |
NA |
500000 |
万三科技,秉承原装,购芯无忧 |
询价 | ||
OMRON |
连接器 |
123500 |
一级代理 原装正品假一罚十价格优势长期供货 |
询价 | |||
Omron |
23+ |
NA |
5700 |
航宇科工半导体-中国航天科工集团战略合作伙伴! |
询价 | ||
FERRANTI |
1116+ |
DIP |
6869 |
绝对原装现货 |
询价 | ||
FERRANTI |
2023+ |
80000 |
一级代理/分销渠道价格优势 十年芯程一路只做原装正品 |
询价 | |||
FERRANTI |
D/C |
CDIP |
5 |
特价热销现货库存100%原装正品欢迎来电订购! |
询价 | ||
TI |
22+ |
八脚 |
2978 |
绝对原装自家现货!真实库存!欢迎来电! |
询价 | ||
FERRANTI |
DIP |
11200 |
原厂授权一级代理、全球订货优势渠道、可提供一站式BO |
询价 | |||
GAMEWELL-FCI |
23+ |
NA |
39960 |
只做进口原装,终端工厂免费送样 |
询价 |
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