60V N-Channel SpeedFETTM

It combines advanced trench MOSFET technology with a low resistance package to provide extremely low RDS(ON). • Advance device constructure\r\n• Low RDS(ON) to minimize conduction loss\r\n• Low Gate Charge for fast switching\r\n• Low Thermal resistance;

ZMJSEMI

真茂佳

OptiMOS3 Power-Transistor

Features • Ideal for high frequency switching and sync. rec. • Optimized technology for DC/DC converters • Excellent gate charge x R DS(on) product (FOM) • Very low on-resistance RDS(on) • Superior thermal resistance • N-channel, logic level • 100 avalanche tested • Pb-free plating; RoHS c

文件：336.29 Kbytes 页数：9 Pages

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英飞凌

OptiMOSTM3 Power-Transistor

文件：567.65 Kbytes 页数：9 Pages

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英飞凌

New OptiMOS??40V and 60V

文件：1.02174 Mbytes 页数：2 Pages

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英飞凌