车规类MOSFET

ZMJSEMI

真茂佳

N-Channel Enhancement Mode Field Effect Transistor

Features: ● Low Gate Charge for Fast Switching Application ● Low RDS(ON) to Minimize Conductive Loss ● 100% EAS Guaranteed ● Optimized V(BR)DSS Ruggedness ● Lead-Free,RoHS Compliant Description: The ADM200N06 series MOSFETs is a new technology, which combines an innovative super junct

文件：1.10957 Mbytes 页数：6 Pages

ADV

爱德微

N-Channel Enhancement Mode Field Effect Transistor

Features: ● Low Gate Charge for Fast Switching Application ● Low RDS(ON) to Minimize Conductive Loss ● 100% EAS Guaranteed ● Optimized V(BR)DSS Ruggedness ● Lead-Free,RoHS Compliant Description: The ADM200N06G series MOSFETs is a new technology, which combines an innovative super junc

文件：1.10951 Mbytes 页数：6 Pages

ADV

爱德微

N-Channel Enhancement Mode Power MOSFET

Description The G200N06K uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. Application l Power switch l DC/DC converters

文件：831.95 Kbytes 页数：6 Pages

GOFORD

谷峰半导体