40V N-Channel Power MOSFET

The ZM200N04T combines advanced trench MOSFET technology with a low resistance package to provide extremely low RDS(ON) . • Advance high cell density Trench technology\r\n• Low Gate Charge for fast switching\r\n• Low Thermal resistance;

ZMJSEMI

真茂佳半导体

N-Channel Enhancement Mode Field Effect Transistor

Features: ● Low Gate Charge for Fast Switching Application ● Low RDS(ON) to Minimize Conductive Loss ● 100% EAS Guaranteed ● Optimized V(BR)DSS Ruggedness ● Lead-Free,RoHS Compliant Description: The ADM200N04 series MOSFETs is a new technology, which combines an innovative super junct

文件：1.48702 Mbytes 页数：6 Pages

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爱德微

N-Channel Enhancement Mode Field Effect Transistor

Features: ● Low Gate Charge for Fast Switching Application ● Low RDS(ON) to Minimize Conductive Loss ● 100% EAS Guaranteed ● Optimized V(BR)DSS Ruggedness ● Lead-Free,RoHS Compliant Description: The ADM200N04G series MOSFETs is a new technology, which combines an innovative super junc

文件：1.48695 Mbytes 页数：6 Pages

ADV

爱德微

N-Channel Enhancement Mode Field Effect Transistor

Features: ● Low Gate Charge for Fast Switching Application ● Low RDS(ON) to Minimize Conductive Loss ● 100% EAS Guaranteed ● Optimized V(BR)DSS Ruggedness ● Lead-Free,RoHS Compliant Description: The ADM200N04Q uses advanced trench technology and design to provide excellent RDS(ON) wit

文件：987.71 Kbytes 页数：6 Pages

ADV

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