30V N-Channel Power MOSFET

The ZM027N03N combines advanced trench MOSFET technology with a low resistance package to provide extremely low RDS(ON). This device is ideal for switch and battery protection applications. • Advance high cell density Trench technology\r\n• Low Gate Charge for fast switching\r\n• Low Thermal resistance;

ZMJSEMI

真茂佳半导体

OptiMOS짰2 Power-Transistor

文件：371.96 Kbytes 页数：10 Pages

Infineon

英飞凌

OptiMOS2 Power-Transistor

文件：379.18 Kbytes 页数：10 Pages

Infineon

英飞凌

OptiMOS짰2 Power-Transistor

文件：371.96 Kbytes 页数：10 Pages

Infineon

英飞凌