具有防窃电功能的电能计量芯片

ZK2010是电子式电度表的核心计量芯片，它在设计上采用了过采样和数字信号处理技术，从而大大地提高了芯片的测量准确度，同时在A/D 转换后的数据均由数字电路进行运算和处理，保证了芯片的长期稳定性。基于此芯片设计的电子式电度表具有外围电路简单、精度高、稳定性好等特点，适用于单相两线电力用户的电能计量。.\r\n\r\n ZK2010对正、反向有功功率均可测量，且可将反向有功功率转换成与正向有功功率方向一致的脉冲输出，因此, 用ZK2010制成的电子式电度表具有很强的防窃电能力。\r\n\r\n ZK2010采用了合理的数字化的防潜动阀值设计,在保证可靠地防止潜动的前提下，使起动电流远 • 提供三路-△ADC\r\n• 提供两路电流和一路电压有效值测量，在输入400:1动态范围内，有效值测量误差<0.5%\r\n• 精确测量正、负两个方向的有功功率，且以同一方向计算电能，在输入1500:1动态范围内，测量误差\r\n• 电流电压通道增益可变，在电流通道输入端可以使用小的分流电阻\r\n• 防窃电功能\r\n• 具有防潜动功能，潜动阈值可调\r\n• 芯片上带参考电压源2.50V±8%（温度系数典型值30ppm/℃），也可以使用外部电压源\r\n• 单工作电源5V，功耗典型值为25mW\r\n• 具有功率;

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北京中科微

60V NPN MEDIUM POWER LOW SATURATION TRANSISTOR IN SOT223

DESCRIPTION Packaged in the SOT223 outline this new low saturation 60V NPN transistor offers extremely low on state losses making it ideal for use in DC-DC circuits and various driving and power management functions. FEATURES • Extremely low equivalent on-resistance; RSAT = 35mV at 6A • 6 amps

文件：122.74 Kbytes 页数：6 Pages

ZETEX

60V NPN MEDIUM POWER LOW SATURATION TRANSISTOR IN SOT223

DESCRIPTION Packaged in the SOT223 outline this new low saturation 60V NPN transistor offers extremely low on state losses making it ideal for use in DC-DC circuits and various driving and power management functions. FEATURES • Extremely low equivalent on-resistance; RSAT = 35mV at 6A • 6 amps

文件：122.74 Kbytes 页数：6 Pages

ZETEX

60V NPN MEDIUM POWER LOW SATURATION TRANSISTOR IN SOT223

DESCRIPTION Packaged in the SOT223 outline this new low saturation 60V NPN transistor offers extremely low on state losses making it ideal for use in DC-DC circuits and various driving and power management functions. FEATURES • Extremely low equivalent on-resistance; RSAT = 35mV at 6A • 6 amps

文件：122.74 Kbytes 页数：6 Pages

ZETEX