高精度20位全差分350 kSPS SAR ADC

ZJC2020是一款低噪声、低功耗、20位全差分输入逐次逼近型模数转换器(SAR ADC)，具备350 kSPS吞吐率，封装小，易使用，可降低系统的功耗和复杂性，实现高密度设计。\n\nZJC2020需要单电源供电，对IN+与IN-之间的模拟输入电压进行采样，范围从-VREF至+VREF(VREF范围为0.5 V至VDD)。ZJC2020基准电压由外部提供，独立于电源电压。利用独立VIO引脚ZJC2020可与1.8 V，2.5 V，3.3 V和5 V逻辑兼容。此器件提供一个SPI兼容串口，也支持菊链操作以实现多个器件串行级联。\n\nZJC2020分10引脚MSOP和DFN封装，工作温度范围为 • 20位真差分，无失码\n• 吞吐率：350 kSPS\n• INL：±2.5 LSB 典型值\n• DNL：-0.5/+0.7 LSB典型值\n• 信纳比(SINAD)：101.4dB在1 kHz\n• 谐波失真(THD)：- 118 dB在1 kHz\n• 差分输入范围：±VREF\n• 触发后无延迟响应\n• 5 V单电源供电 \n• 逻辑电平支持：1.8 V/2.5 V/3 V/5 V\n• 封装：MSOP-10/DFN-10\n• 工业温度范围：-40 ℃至+85 ℃;

ZJW

治精微

100V, SOT23, NPN medium power transistor

Description Advanced process capability and package design have been used to maximize the power handling and performance of this small outline transistor. The compact size and ratings of this device make it ideally suited to applications where space is at a premium. Features • Higher power diss

文件：522.72 Kbytes 页数：6 Pages

DIODES

美台半导体

100V, SOT23, NPN medium power transistor

Description Advanced process capability and package design have been used to maximize the power handling and performance of this small outline transistor. The compact size and ratings of this device make it ideally suited to applications where space is at a premium. Features • Higher power diss

文件：514.179 Kbytes 页数：6 Pages

ZETEX

100V, SOT23, NPN medium power transistor

Description Advanced process capability and package design have been used to maximize the power handling and performance of this small outline transistor. The compact size and ratings of this device make it ideally suited to applications where space is at a premium. Features • Higher power diss

文件：522.72 Kbytes 页数：6 Pages

DIODES

美台半导体