DIODE VAR CAPACITANCE SOT23-3

Diodes

美台半导体

Package：TO-236-3，SC-59，SOT-23-3；包装：卷带（TR）剪切带（CT） 类别：分立半导体产品 二极管 - 可变电容（变容器，可变电抗器） 描述：DIODE VAR CAPACITANCE SOT23-3

DIODES

美台半导体

Linear Integrated Circuit TV Horizontal Processor

Description: The NTE836 is a TV Horizontal Processor in an 8–Lead DIP type package that includes a phase detector, oscillator and pre–driver. This device is designed for use in all types of television receivers that have negative flyback inputs. Features: • Internal Shunt Regulator •

文件：18.98 Kbytes 页数：2 Pages

NTE

MICROPOWER VOLTAGE SUPERVISOR RESET ACTIVE HIGH

DESCRIPTION The TS836 ultra low power integrated circuit incorporates a high stability band-gap voltage reference and a comparator with open drain output. The threshold voltage is set at 4.5V for TS836-4 by internal thermally matched resistances. The comparator exhibits a 20µs response (with 10

文件：73.38 Kbytes 页数：8 Pages

STMICROELECTRONICS

意法半导体

NPN SILICON EPITAXIAL TWIN TRANSISTOR

DESCRIPTION The µPA836TF has two different built-in transistors (Q1 and Q2) for low noise amplification in the VHF band to UHF band. FEATURES • Low noise Q1 : NF = 1.5 dB TYP. @f = 2 GHz, VCE = 3 V, IC = 3 mA Q2 : NF = 1.7 dB TYP. @f = 2 GHz, VCE = 1 V, IC = 3 mA • High gain Q1 : |

文件：79.54 Kbytes 页数：11 Pages

NEC

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