APT8030LVR

PowerMOSVisanewgenerationofhighvoltageN-ChannelenhancementmodepowerMOSFETs.

PowerMOSV®isanewgenerationofhighvoltageN-ChannelenhancementmodepowerMOSFETs.ThisnewtechnologyminimizestheJFETeffect,increasespackingdensityandreducestheon-resistance.PowerMOSV®alsoachievesfasterswitchingspeedsthroughoptimizedgatelayout. •FasterSwitchi

APT8030LVR

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent:ID=27A@TC=25℃ ·DrainSourceVoltage :VDSS=800V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.3Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-D

AT8030

2X15W2.0channelanti-breakingClassDamplifier

AT8030TT

2X15W2.0channelanti-breakingClassDamplifier

BF8030

DCBlowerFan80x80x30mm

C8030

RG59/UTypeCoaxial&2/C18AWGSiameseCCTV-PlenumCable

CEB8030

N-ChannelLogicLevelEnhancementModeFieldEffectTransistor

FEATURES ■30V,75A,RDS(ON)=6mΩ@VGS=10V. RDS(ON)=9mΩ@VGS=4.5V. ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■TO-220&TO-263package.

CEB8030L

N-ChannelLogicLevelEnhancementModeFieldEffectTransistor

FEATURES ■30V,75A,RDS(ON)=6mΩ@VGS=10V. RDS(ON)=9mΩ@VGS=4.5V. ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■TO-220&TO-263package.

CEP8030L

N-ChannelLogicLevelEnhancementModeFieldEffectTransistor

FEATURES ■30V,75A,RDS(ON)=6mΩ@VGS=10V. RDS(ON)=9mΩ@VGS=4.5V. ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■TO-220&TO-263package.

CHM8030LANPT

N-ChannelEnhancementModeFieldEffectTransistor

VOLTAGE30VoltsCURRENT75Ampere FEATURE ​​​​​​​*Smallflatpackage.(D2PAK) *HighdensitycelldesignforextremelylowRDS(ON). *Ruggedandreliable. APPLICATION *Servomotorcontrol. *PowerMOSFETgatedrivers. *Otherswitchingapplications.