AUIRFR2607Z

UltraLowOn-Resistance

AUIRFR2607Z

N-ChannelMOSFETTransistor

FEATURES ·DrainCurrent-ID=42A@TC=25℃ ·DrainSourceVoltage-VDSS=75V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=22mΩ(Max)@VGS=10V APPLICATIONS ·DC-DCConverters ·ACandDCmotorcontrols ·LaserDrivers

AUIRFR2607ZTR

HEXFET짰PowerMOSFET

V(BR)DSS75V RDS(on)typ.17.6mΩ max.22mΩ ID(SiliconLimited)45A ID(PackageLimited)42A Description SpecificallydesignedforAutomotiveapplications,thisHEXFET®PowerMOSFETutilizesthelatestprocessingtechniquestoachieveextremelylowon-resista

AUIRFR2607ZTRL

AUTOMOTIVEGRADE

BURNDY_YF2607UI

CuAlloyBareFerrule,SmoothFunnelEntry,26AWG,0.28L,Seamlessbbl,TinPlated,ForUseOnCuCond.

CPT2607

ExternalDrivePiezoTransducer(AC)

DLPC2607

PICOProcessor

DLPC2607ZVB

PICOProcessor

DTQ2607

P-Channel60-V(D-S)MOSFET

FEATURES •FastSwitching •DT-TrenchPowerMOSFET APPLICATIONS •LoadSwitches •Half-BridgeMotorDrives •HighVoltageNon-SynchronousBuckConverters

FKN2607

P-Ch20VFastSwitchingMOSFETs

Description TheFKN2607isthehighcelldensitytrenched P-chMOSFETs,whichprovidesexcellentRDSON andefficiencyformostofthesmallpower switchingandloadswitchapplications TheFKN2607meettheRoHSandGreenProduct requirementwithfullfunctionreliabilityapproved.