丝印：SVJ；Package：DFN2020B；MOSFETs Silicon P-Channel MOS

Applications • Power Management Switches Features (1) 1.8-V gate drive voltage. (2) Low drain-source on-resistance RDS(ON) = 144 mΩ (max) (@VGS = -1.8 V) RDS(ON) = 72.0 mΩ (max) (@VGS = -2.5 V) RDS(ON) = 50.0 mΩ (max) (@VGS = -4.5 V) RDS(ON) = 42.0 mΩ (max) (@VGS = -10 V)

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TOSHIBA

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Small-signal MOSFET

Application Scope：Power Management Switches\n\nFeature：Low drain-source on-resistance\n\nPolarity：P-ch\n\nGeneration：U-MOSⅥ\n\nInternal Connection：Single\n\nPPAP：Capable(*)\n\nRoHS Compatible Product(s) (#)：Please contact us.

Toshiba

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