丝印：SWD；Package：DFN2020B；MOSFETs Silicon N-Channel MOS

Applications • Power Management Switches • DC-DC Converters Features (1) 1.8-V gate drive voltage. (2) Low drain-source on-resistance : RDS(ON) = 56 mΩ (max) (@VGS = 4.5 V) RDS(ON) = 72 mΩ (max) (@VGS = 2.5 V) RDS(ON) = 109 mΩ (max) (@VGS = 1.8 V)

文件：320.79 Kbytes 页数：9 Pages

TOSHIBA

东芝

Small-signal MOSFET

Application Scope：Power Management Switches / DC-DC Converters\n\nFeature：Low drain-source on-resistance\n\nPolarity：N-ch\n\nGeneration：U-MOSⅦ-H\n\nInternal Connection：Single\n\nPPAP：Capable(*)\n\nRoHS Compatible Product(s) (#)：Please contact us.

Toshiba

东芝