AAT3172

HighCurrentLEDFlashDriverChargePumpIC

AAT3172

HighCurrentLEDFlashDriverChargePump

Features •VINRange:2.7Vto5.5V •600mAOutputCurrent •Tri-Mode1X/1.5X/2XinCurrentMode •VoltageModeOperation:1.5X,100mA •DualRegulatedCurrentSinks •CurrentMatchBetweenCurrentSinks •32CurrentStepsSetbyAS2Cwire •1μFInput,Output,andFlyingCapacitors •

AN3172

Thisapplicationnotedescribestheperformanceofa90W

C3172

2C14SOLIDBCHALAROASFLEXFireAlarm/LifeSafetyCable

CED3172

N-ChannelEnhancementModeFieldEffectTransistor

FEATURES ■30V,36A,RDS(ON)=20mΩ@VGS=10V. RDS(ON)=28mΩ@VGS=4.5V. ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■Leadfreeproductisacquired. ■TO-251&TO-252package.

CED3172

N-ChannelEnhancementModeFieldEffectTransistor

FEATURES 30V,36A,RDS(ON)=20mW@VGS=10V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. TO-251&TO-252package. RDS(ON)=32mW@VGS=4.5V. Leadfreeproductisacquired.

CEM3172

N-ChannelEnhancementModeFieldEffectTransistor

FEATURES ■30V,8.9A,RDS(ON)=20mΩ@VGS=10V. RDS(ON)=28mΩ@VGS=4.5V. ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■Leadfreeproductisacquired. ■SurfacemountPackage.

CEU3172

N-ChannelEnhancementModeFieldEffectTransistor

FEATURES ■30V,36A,RDS(ON)=20mΩ@VGS=10V. RDS(ON)=28mΩ@VGS=4.5V. ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■Leadfreeproductisacquired. ■TO-251&TO-252package.

CEU3172

N-ChannelEnhancementModeFieldEffectTransistor

FEATURES 30V,36A,RDS(ON)=20mW@VGS=10V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. TO-251&TO-252package. RDS(ON)=32mW@VGS=4.5V. Leadfreeproductisacquired.

CHM3172JPT

N-ChannelEnhancementModeFieldEffectTransistor

VOLTAGE30VoltsCURRENT8.9Ampere FEATURE *Smallflatpackage.(SO-8) *SuperHighdensitycelldesignforextremelylowRDS(ON). *Highsaturationcurrentcapability. APPLICATION *Servomotorcontrol. *PowerMOSFETgatedrivers. *Otherswitchingapplications.