XPSM828303ARDSR

TPSM828303, 2.25-V to 5.5-V input, 1-, 2-, 3-A Step-Down Power Module With Integrated Inductor

1Features •2.25-Vto5.5-Vinputvoltagerange •0.5-Vto4.5-Vadjustableoutputvoltage •1FBvoltageaccuracy(–40°Cto125°CTJ) •2.0-MHzswitchingfrequency •35-mΩand18-mΩinternalpowerMOSFETs •DCS-Controltopology •OptimizedEMIperformance •FacilitatesCISPR11/32compli

TPSM828303

TPSM82830x,2.25-Vto5.5-Vinput,1-,2-,3-AStep-DownPowerModuleWithIntegratedInductor

1Features •2.25-Vto5.5-Vinputvoltagerange •0.5-Vto4.5-Vadjustableoutputvoltage •1%FBvoltageaccuracy(–40°Cto125°CTJ) •OptimizedEMIperformance •FacilitatesCISPR11/32compliance –Integratedon-chipnoise-filteringcapacitors –MeasurementsaccordingtoCISPRava

TPSM828303

TPSM82830x,LowEMI,2.25Vto5.5Vinput,1A,2Aand3AStep-DownPowerModuleWithIntegratedInductorinQFNandMagPack™Package

1Features •OptimizedEMIperformance •FacilitatesCISPR11/32compliance –Integratedon-chipnoise-filteringcapacitors –MeasurementsaccordingtoCISPRavailable •0.5Vto4.5Vadjustableoutputvoltage •1%FBvoltageaccuracy(–40°Cto125°CTJ) •55mΩdropoutresistance •2.25

TPSM828303

TPSM828303,2.25-Vto5.5-Vinput,1-,2-,3-AStep-DownPowerModuleWithIntegratedInductor

1Features •2.25-Vto5.5-Vinputvoltagerange •0.5-Vto4.5-Vadjustableoutputvoltage •1FBvoltageaccuracy(–40°Cto125°CTJ) •2.0-MHzswitchingfrequency •35-mΩand18-mΩinternalpowerMOSFETs •DCS-Controltopology •OptimizedEMIperformance •FacilitatesCISPR11/32compli

TPSM828303APVCBR

TPSM82830x,LowEMI,2.25Vto5.5Vinput,1A,2A,and3AStep-DownPowerModulesWithIntegratedInductorinQFNandMagPack™Packages

1Features •OptimizedEMIperformance –FacilitatesCISPR11/32compliance –MagPacktechnologyshieldsinductorandIC –Integratedon-chipnoise-filteringcapacitors •0.5Vto4.5Vadjustableoutputvoltage •1%FBvoltageaccuracy(–40°Cto125°CTJ) •55mΩdropoutresistance •2.2

TPSM828303ARDSR

TPSM82830x,LowEMI,2.25Vto5.5Vinput,1A,2Aand3AStep-DownPowerModuleWithIntegratedInductorinQFNandMagPack™Package

1Features •OptimizedEMIperformance •FacilitatesCISPR11/32compliance –Integratedon-chipnoise-filteringcapacitors –MeasurementsaccordingtoCISPRavailable •0.5Vto4.5Vadjustableoutputvoltage •1%FBvoltageaccuracy(–40°Cto125°CTJ) •55mΩdropoutresistance •2.25

TPSM828303ARDSR

TPSM82830x,2.25-Vto5.5-Vinput,1-,2-,3-AStep-DownPowerModuleWithIntegratedInductor

1Features •2.25-Vto5.5-Vinputvoltagerange •0.5-Vto4.5-Vadjustableoutputvoltage •1%FBvoltageaccuracy(–40°Cto125°CTJ) •OptimizedEMIperformance •FacilitatesCISPR11/32compliance –Integratedon-chipnoise-filteringcapacitors –MeasurementsaccordingtoCISPRava

TPSM828303ARDSR

TPSM828303,2.25-Vto5.5-Vinput,1-,2-,3-AStep-DownPowerModuleWithIntegratedInductor

1Features •2.25-Vto5.5-Vinputvoltagerange •0.5-Vto4.5-Vadjustableoutputvoltage •1FBvoltageaccuracy(–40°Cto125°CTJ) •2.0-MHzswitchingfrequency •35-mΩand18-mΩinternalpowerMOSFETs •DCS-Controltopology •OptimizedEMIperformance •FacilitatesCISPR11/32compli

TPSM828303KPVCBR

TPSM82830x,LowEMI,2.25Vto5.5Vinput,1A,2A,and3AStep-DownPowerModulesWithIntegratedInductorinQFNandMagPack™Packages

1Features •OptimizedEMIperformance –FacilitatesCISPR11/32compliance –MagPacktechnologyshieldsinductorandIC –Integratedon-chipnoise-filteringcapacitors •0.5Vto4.5Vadjustableoutputvoltage •1%FBvoltageaccuracy(–40°Cto125°CTJ) •55mΩdropoutresistance •2.2

TPSM828303PVCBR

TPSM82830x,LowEMI,2.25Vto5.5Vinput,1A,2Aand3AStep-DownPowerModuleWithIntegratedInductorinQFNandMagPack™Package

1Features •OptimizedEMIperformance •FacilitatesCISPR11/32compliance –Integratedon-chipnoise-filteringcapacitors –MeasurementsaccordingtoCISPRavailable •0.5Vto4.5Vadjustableoutputvoltage •1%FBvoltageaccuracy(–40°Cto125°CTJ) •55mΩdropoutresistance •2.25