XL1000-BD中文资料Low Noise Amplifier数据手册MACOM规格书

描述 Description

MACOM's three stage 20.0-40.0 GHz GaAs MMIC low noise amplifier has a small signal gain of 20.0 dB with a noise figure of 2.0 dB across the band. This MMIC uses MACOM’s GaAs PHEMT device model technology, and is based upon electron beam lithography to ensure high repeatability and uniformity. The chip has surface passivation to protect and provide a rugged part with backside via holes and gold metallization to allow either a conductive epoxy or eutectic solder die attach process. This device is well suited for Millimeter-wave Point-to-Point Radio, LMDS, SATCOM and VSAT applications.

特性 Features

·Self Bias Architecture
·RoHS* Compliant
·100% Visual Inspection to MIL-STD-883 Method 2010
·100% On-Wafer RF, DC and Noise Figure Testing
·+9.0 dBm P1dB Compression Point
·2.0 dB Noise Figure
·20.0 dB Small Signal Gain
·3.0 or 5.0 V Operation
·Small Size
·260°C Reflow Compatible

应用 Application

·ISM
·Wireless Networking and Communication