ALL DIMENSIONS IN MM [INCH].

文件：177.97 Kbytes 页数：1 Pages

E-SWITCH

L,S BAND POWER GaAs FET?

DESCRIPTION The MGF0905A, GaAs FET with an N-channel schottky gate, is designed for use in UHF band amplifiers. FEATURES • High output power Po=34.0dBm(TYP.) @f=1.65GHz,Pin=26dBm • High power gain Gp=8.0dB(TYP.) @f=1.65GHz,Pin=26dBm • High power added efficiency P.A.E =40(TYP.)

文件：116.06 Kbytes 页数：3 Pages

MITSUBISHI

三菱电机

L,S BAND POWER GaAs FET?

DESCRIPTION The MGF0905A, GaAs FET with an N-channel schottky gate, is designed for use in UHF band amplifiers. FEATURES • High output power Po=34.0dBm(TYP.) @f=1.65GHz,Pin=26dBm • High power gain Gp=8.0dB(TYP.) @f=1.65GHz,Pin=26dBm • High power added efficiency P.A.E =40(TYP.)

文件：116.06 Kbytes 页数：3 Pages

MITSUBISHI

三菱电机

1 Watt SIP7 SIP7 Single & Dual Output

文件：102.24 Kbytes 页数：3 Pages

RECOM