首页 >XDRA726AXDABC>规格书列表
零件编号 | 下载&订购 | 功能描述 | 制造商&上传企业 | LOGO |
---|---|---|---|---|
10mmAdjustableShieldedRFCoil(I) | FRONTIER Frontier Electronics | FRONTIER | ||
EPITAXIALPLANARPNPTRANSISTOR(SWITCHING,INTERFACECIRCUITANDDRIVERCIRCUIT) SWITCHINGAPPLICATION. INTERFACECIRCUITANDDRIVERCIRCUITAPPLICATION. FEATURES ●ᴌWithBuilt-inBiasResistors. ●ᴌSimplifyCircuitDesign. ●ᴌReduceaQuantityofPartsandManufacturingProcess. ●ᴌHighPackingDensity. | KECKEC CORPORATION KEC株式会社 | KEC | ||
EPITAXIALPLANARPNPTRANSISTOR(HIGHCURRENTSWITCHING,INTERFACECIRCUITANDDRIVERCIRCUIT) HIGHCURRENTSWITCHINGAPPLICATION. INTERFACECIRCUITANDDRIVERCIRCUITAPPPLICATION. FEATURES ●WithBuilt-inBiasResistors. ●SimplifyCircuitDesign. ●ReduceaQuantityofPartsandManufacturingProcess. ●HighOutputCurrent:-800mA. | KECKEC CORPORATION KEC株式会社 | KEC | ||
EPITAXIALPLANARPNPTRANSISTOR(SWITCHING,INTERFACECIRCUITANDDRIVERCIRCUIT) SWITCHINGAPPLICATION. INTERFACECIRCUITANDDRIVERCIRCUITAPPLICATION. FEATURES ●WithBuilt-inBiasResistors. ●SimplifyCircuitDesign. ●ReduceaQuantityofPartsandManufacturingProcess. ●HighPackingDensity. | KECKEC CORPORATION KEC株式会社 | KEC | ||
WideInput,7.5WSMTSingle&DualOutputDC/DCConverters | MPD MPD (Memory Protection Devices) | MPD | ||
SchottkyBarrierDiodes(SBD) Siliconepitaxialplanartype Forsuperhighspeedswitching Forsmallcurrentrectification ■Features •Twoisolatedelementsarecontainedinonepackage,allowinghigh-densitymounting •TwoMA3X721(MA721)iscontainedinonepackage(twodiodesinadifferentdirection) •IF(AV)=200 | PanasonicPanasonic Corporation 松下松下电器 | Panasonic | ||
5V/3.3V/3V5AStep-Down,PWM,Switch-ModeDC-DCRegulators GeneralDescription TheMAX787/MAX788/MAX789aremonolithic,bipolar,pulse-widthmodulation(PWM),switch-mode,step-downDC-DCregulators.Eachisratedat5A.Veryfewexternalcomponentsareneededforstandardoperationbecausethepowerswitch,oscillator,feedback,andcontrolcircuitryar | MaximMaximIntegrated 美信半导体 | Maxim | ||
Switch-ModeBatteryChargerDelivers5A Switch-ModeBatteryChargerDelivers5A Thefast-chargecontrollerIC3(Figure1)normallydirectscurrenttothebatteryviaanexternalpnptransistor.Inthiscircuit,thetransistorisreplacedwitha5Aswitchingregulator(IC1)thatdeliversequivalentpowerwithhigherefficiency. IC1is | Dallas Dallas Semiconductor Corp. | Dallas | ||
5A/2AStep-Down,PWM,Switch-ModeDC-DCRegulators GeneralDescription TheMAX724/MAX726aremonolithic,bipolar,pulsewidthmodulation(PWM),switch-modeDC-DCregulatorsoptimizedforstep-downapplications.TheMAX724isratedat5A,andtheMAX726at2A.Fewexternalcomponentsareneededforstandardoperationbecausethepowerswitch,oscil | MaximMaximIntegrated 美信半导体 | Maxim | ||
5A/2AStep-Down,PWM,Switch-ModeDC-DCRegulators GeneralDescription TheMAX724/MAX726aremonolithic,bipolar,pulsewidthmodulation(PWM),switch-modeDC-DCregulatorsoptimizedforstep-downapplications.TheMAX724isratedat5A,andtheMAX726at2A.Fewexternalcomponentsareneededforstandardoperationbecausethepowerswitch,oscil | MaximMaximIntegrated 美信半导体 | Maxim | ||
1472MHzBPFforDAB | SOSHINSOSHIN 双信电机双信电机株式会社 | SOSHIN | ||
PackageSOP8 | ZMD Integrated Device Technology | ZMD | ||
3WATTGLASSZENERDIODES FEATURES ●Microminiaturepackage. ●Voidlesshermeticallysealedglasspackage. ●Triplelayerpassivation. ●Metallurgicallybonded. ●Highperformancecharacteristics. ●Stableoperationattemperatureto200°C ●Verylowthermalimpedance. | MicrosemiMicrosemi Corporation 美高森美美高森美公司 | Microsemi | ||
IntegratedCircuitWideBandAmplifier Features: •ExceptionallyHighAmplifierGain:PowerGainat4.5MHz/s–75dB(Typ) •ExcellentLimitingCharacteristics:InputLimitingVoltage(Knee)=600µV(Typ)at10.7MHz/s •WideFrequencyCapability:100kHz/sto>20MHz/s | NTE NTE Electronics, Inc | NTE | ||
VeryLowNoise,High-Speed,12VCMOSOperationalAmplifier | ||||
VeryLowNoise,High-Speed,12VCMOSOperationalAmplifier | TI1Texas Instruments(TI) 德州仪器德州仪器 (TI) | TI1 | ||
VeryLowNoise,High-Speed,12VCMOSOperationalAmplifier | TI1Texas Instruments(TI) 德州仪器德州仪器 (TI) | TI1 | ||
VeryLowNoise,High-Speed,12VCMOSOperationalAmplifier | TI1Texas Instruments(TI) 德州仪器德州仪器 (TI) | TI1 | ||
VeryLowNoise,High-Speed,12VCMOSOperationalAmplifier | ||||
VeryLowNoise,High-Speed,12VCMOSOperationalAmplifier |
供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
---|---|---|---|---|---|---|---|
TI |
三年内 |
1983 |
纳立只做原装正品13590203865 |
询价 | |||
TI |
20+ |
N/A |
10000 |
专业电子元器件一站式配单服务 QQ:646031048 可开增票 |
询价 | ||
TI/德州仪器 |
21+ |
BGA |
193 |
原装现货假一赔十 |
询价 | ||
TI/德州仪器 |
21+ |
BGA |
6000 |
原装正品 |
询价 | ||
TI/德州仪器 |
23+ |
BGA |
10000 |
公司只做原装正品 |
询价 | ||
TI/德州仪器 |
94+ |
BGA |
15000 |
原厂VIP渠道,亚太地区一级代理商,可提供更多数量! |
询价 | ||
TI/德州仪器 |
21+ |
18000 |
只做原装正品假一赔十!正规渠道订货! |
询价 | |||
TI/德州仪器 |
2023+ |
SMD |
8635 |
一级代理优势现货,全新正品直营店 |
询价 | ||
TI |
22+ |
BGA |
3632 |
原装保证,实单支持 |
询价 | ||
TI |
2020+ |
HBGA |
80000 |
只做自己库存,全新原装进口正品假一赔百,可开13%增 |
询价 |
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