AON6512

30VN-ChannelAlphaMOS

GeneralDescription •LatestTrenchPowerAlphaMOS(αMOSLV)technology •VeryLowRDS(on)at4.5VGS •LowGateCharge •HighCurrentCapability •RoHSandHalogen-FreeCompliant VDS30V ID(atVGS=10V)150A RDS(ON)(atVGS=10V)

AON6512

N-ChannelMOSFET

AP6512

BobbintronElectricalCorporation

AP6512A

BobbintronElectricalCorporation

BD6512F

2chHighSideSwitchICsforUSBDevicesandMemoryCards

BD6512F

High-SideSwitch

Description HighsideswitchforUSBisahighsideswitchhavingovercurrentprotectionusedinpowersupplylineofuniversalserialbus(USB).ItsswitchunithastwochannelsofN-channelpowerMOSFET,andcurrentof500mAasUSBstandardcanbeflowntotherespectivechannels.And,overcu

BH6512FS

4-channelPWMdriverforCDandMDuse

BX6512

RFAMPLIFIERMODEL

FDD6512A

20VN-ChannelPowerTrenchMOSFET

GeneralDescription ThisN-ChannelMOSFEThasbeendesignedspecificallytoimprovetheoverallefficiencyofDC/DCconvertersusingeithersynchronousorconventionalswitchingPWMcontrollers.Ithasbeenoptimizedforlowgatecharge,lowRDS(ON),fastswitchingspeedandextremelylowRDS(O

FDD6512A

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent:ID=34A@TC=25℃ ·DrainSourceVoltage :VDSS=20V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=21mΩ(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DCco