XB1008-BD中文资料Buffer Amp数据手册MACOM规格书

描述 Description

MACOM’s two stage 10.0-21.0 GHz GaAs MMIC buffer amplifier has a small signal gain of 18.0 dB with a +20.0 dBm P1dB output compression point. The device also provides variable gain regulation with adjustable bias. This MMIC uses MACOM’s GaAs PHEMT device model technology, and is based upon electron beam lithography to ensure high repeatability and uniformity. The chip has surface passivation to protect and provide a rugged part with backside via holes and gold metallization to allow either a conductive epoxy or eutectic solder die attach process. This device is well suited for Microwave and Millimeter-wave Point-to-Point Radio, LMDS, SATCOM and VSAT applications.

特性 Features

·Excellent Transmit LO/Output Buffer Stage ? Compact Size ? 18.0 dB Small Signal Gain ??????
·RoHS* Compliant
·100% Commercial-Level Visual Inspection Using Mil-Std-883 Method 2010
·100% On-Wafer RF, DC & Output Power Testing
·Variable Gain with Adjustable Bias
·5.5 dB Noise Figure
·+20.0 dBm P1dB Compression Point
·260°C Reflow Compatible

应用 Application

·Aerospace and Defense
·ISM
·Wireless Networking and Communication