RF Power LDMOS Transistor N−Channel Enhancement−Mode Lateral MOSFET

This 93 W asymmetrical Doherty RF power LDMOS transistor is designed for cellular base station applications covering the frequency range of 1427 to 1517 MHz. Features • Advanced high performance in−package Doherty • Greater negative gate−source voltage range for improved Class C operation

文件：385.37 Kbytes 页数：17 Pages

恩XP

1805–2200 MHz, 107 W AVG., 48 V AIRFAST RF POWER GaN TRANSISTOR

Features  High terminal impedances for optimal broadband performance  Advanced high performance in--package Doherty  Able to withstand extremely high output VSWR and broadband operating conditions

文件：414.55 Kbytes 页数：18 Pages

恩XP

Tight Amplitude Balance

文件：868.87 Kbytes 页数：18 Pages

ANAREN

RF Power LDMOS Transistor

文件：389.33 Kbytes 页数：16 Pages

恩XP

定向耦合器 2dB - 5dB

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迅达科技

Package：4-SMD，无引线；包装：卷带（TR） 类别：RF/IF，射频/中频和 RFID RF 定向耦合器 描述：RF DIR COUPLER 1.7GHZ-2GHZ SMD

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迅达科技