2N7000

CASE29-04,STYLE22TO-92(TO-226AA)

2N7000

SmallSignalMOSFET200mAmps,60VoltsN-ChannelTO-92

SmallSignalMOSFET200mAmps,60Volts N−ChannelTO−92 Features •Pb−FreePackagesareAvailable*

2N7000

N-ChannelEnhancementModeFieldEffectTransistor

2N7000

LogicN-ChannelMOSFET

GeneralDescription ThisPowerMOSFETisproducedusingplanarDMOStechnology.AndthisPowerMOSFETiswellsuitedforBatteryswitch,Loadswitch,Motorcontrollerandothersmallsignalswitches. Features ■RDS(on)(Max5Ω)@VGS=10V RDS(on)(Max5.3Ω)@VGS=4.5V ■GateCharge(Typical

2N7000

DMOSTransistors(N-Channel)

2N7000

N-ChannelEnhancementModeFieldEffectTransistor

Description TheseN-channelenhancementmodefieldeffecttransistorsareproducedusingFairchildsproprietary,highcelldensity,DMOStechnology.Theseproductshavebeendesignedtominimizeon-stateresistancewhileprovidingrugged,reliable,andfastswitchingperformance.Theycanbeused

2N7000

FIELDEFFECTTRANSISTOR

INTERFACEANDSWITCHINGAPPLICATION. FEATURES •HighdensitycelldesignforlowRDS(ON). •Voltagecontrolledsmallsignalswitch. •Ruggedandreliable. •Highsaturationcurrentcapability.

2N7000

SmallSignalMOSFETN-Channel

Features: *LowOn-Resistance:5Ω *LowInputCapacitance:60PF *LowOutputCapacitance:25PF *LowThreshole:1.4V(TYE) *FastSwitchingSpeed:10ns

2N7000

SmallSignalMOSFET200mAmps,60VoltsN?묬hannelTO??2200mAMPS60VOLTS

2N7000

N-ChannelEnhancement-ModeMOSTransistor

DESCRIPTION The2N7000utilizesCalogic’sverticalDMOStechnology.ThedeviceiswellsuitedforswitchingapplicationswhereBVof60Vandlowonresistance(under5ohms)arerequired.The2N7000ishousedinaplasticTO-92package.