2N7000中文资料仙童半导体数据手册PDF规格书

描述 Description

These N-channel enhancement mode field effect transistors are produced using Fairchilds proprietary, high cell density, DMOS technology. These products have been designed to minimize on-state resistance while providing rugged, reliable, and fast switching performance. They can be used in most applications requiring up to 400 mA DC and can deliver pulsed currents up to 2 A. These products are particularly suited for low-voltage, low-current applications, such as small servo motor control, power MOSFET gate drivers, and other switching applications.

特性 Features

• High Density Cell Design for Low RDS(ON)

• Voltage Controlled Small Signal Switch

• Rugged and Reliable

• High Saturation Current Capability