5 Volt, Byte Alterable E2PROM

DESCRIPTION The X28HC256 is a second generation high performance CMOS 32K x 8 E2PROM. It is fabricated with Xicor’s proprietary, textured poly floating gate technology, providing a highly reliable 5 Volt only nonvolatile memory. FEATURES • Access Time: 70ns • Simple Byte and Page Write —Si

文件：110.67 Kbytes 页数：24 Pages

XICOR

Xicor Inc.

5 Volt, Byte Alterable EEPROM

5V, Byte Alterable EEPROM The X28HC256 is a second generation high performance CMOS 32k x 8 EEPROM. It is fabricated with Intersil’s proprietary, textured poly floating gate technology, providing a highly reliable 5V only nonvolatile memory Features • Access time: 70ns • Simple byte and pa

文件：286.89 Kbytes 页数：15 Pages

INTERSIL

LOW POWER CMOS EEPROM with hi-speed page write capability 256K EEPROM

The X28HC256 is a second generation high performance CMOS 32k x 8 EEPROM. It is fabricated with Intersil’s proprietary, textured poly floating gate technology, providing a highly reliable 5V only nonvolatile memory. The X28HC256 supports a 128-byte page write operation, effectively providing a 24µ

文件：977.81 Kbytes 页数：21 Pages

ROCHESTER

罗切斯特

5V, Byte Alterable EEPROM

文件：410.17 Kbytes 页数：20 Pages

INTERSIL