5 Volt, Byte Alterable E2PROM

DESCRIPTION The X28C512/513 is an 64K x 8 E2PROM, fabricated with Xicor’s proprietary, high performance, floating gate CMOS technology. Like all Xicor programmable nonvolatile memories the X28C512/513 is a 5V only device. The X28C512/513 features the JEDEC approved pinout for bytewide memories,

文件：126.2 Kbytes 页数：25 Pages

XICOR

Xicor Inc.

5 Volt, Byte Alterable E2PROM

DESCRIPTION The X28C512/513 is an 64K x 8 E2PROM, fabricated with Xicor’s proprietary, high performance, floating gate CMOS technology. Like all Xicor programmable nonvolatile memories the X28C512/513 is a 5V only device. The X28C512/513 features the JEDEC approved pinout for bytewide memories,

文件：126.2 Kbytes 页数：25 Pages

XICOR

Xicor Inc.

5 Volt, Byte Alterable E2PROM

DESCRIPTION The X28C512/513 is an 64K x 8 E2PROM, fabricated with Xicor’s proprietary, high performance, floating gate CMOS technology. Like all Xicor programmable nonvolatile memories the X28C512/513 is a 5V only device. The X28C512/513 features the JEDEC approved pinout for bytewide memories,

文件：126.2 Kbytes 页数：25 Pages

XICOR

Xicor Inc.

5 Volt, Byte Alterable E2PROM

DESCRIPTION The X28C512/513 is an 64K x 8 E2PROM, fabricated with Xicor’s proprietary, high performance, floating gate CMOS technology. Like all Xicor programmable nonvolatile memories the X28C512/513 is a 5V only device. The X28C512/513 features the JEDEC approved pinout for bytewide memories,

文件：126.2 Kbytes 页数：25 Pages

XICOR

Xicor Inc.

丝印：X28C512DMB-12；Package：32LdCERDIP；5V, Byte Alterable EEPROM

文件：848.59 Kbytes 页数：21 Pages

RENESAS

瑞萨

丝印：X28C512DMB-15；Package：32LdCERDIP；5V, Byte Alterable EEPROM

文件：848.59 Kbytes 页数：21 Pages

RENESAS

瑞萨

5V, Byte Alterable EEPROM

文件：465.17 Kbytes 页数：21 Pages

INTERSIL

丝印：X28C512DMB-20；Package：32LdCERDIP；5V, Byte Alterable EEPROM

文件：848.59 Kbytes 页数：21 Pages

RENESAS

瑞萨

5V, Byte Alterable EEPROM

文件：465.17 Kbytes 页数：21 Pages

INTERSIL

5V, Byte Alterable EEPROM

5V, Byte Alterable EEPROM\nThe X28C512, X28C513 are 64K x 8 EEPROM, fabricated with Intersil’s proprietary, high performance, floating gate CMOS technology. Like all Intersil programmable nonvolatile memories, the X28C512, X28C513 are 5V only devices. The X28C512, X28C513 feature the JEDEC approved • Access Time: 90ns\n• Simple Byte and Page Write\n- Single 5V supply\n• No external high voltages or VPPcontrol circuits\n- Self-timed\n• No erase before write\n• No complex programming algorithms\n• No overerase problem\n• Low Power CMOS\n- Active: 50mA\n- Standby: 500µA\n• Software Data Protectio;

Renesas

瑞萨