X28C512DMB-20中文资料5V, Byte Alterable EEPROM数据手册Renesas规格书

描述 Description

5V, Byte Alterable EEPROM
The X28C512, X28C513 are 64K x 8 EEPROM, fabricated with Intersil’s proprietary, high performance, floating gate CMOS technology. Like all Intersil programmable nonvolatile memories, the X28C512, X28C513 are 5V only devices. The X28C512, X28C513 feature the JEDEC approved pin out for byte wide memories, compatible with industry standard EPROMS.

特性 Features

• Access Time: 90ns
• Simple Byte and Page Write
- Single 5V supply
• No external high voltages or VPPcontrol circuits
- Self-timed
• No erase before write
• No complex programming algorithms
• No overerase problem
• Low Power CMOS
- Active: 50mA
- Standby: 500µA
• Software Data Protection
- Protects data against system level inadvertent writes
• High Speed Page Write Capability
• Highly Reliable Direct Write™Cell
- Endurance: 100,000 write cycles
- Data retention: 100 years
- Early end of write detection
- DATApolling
- Toggle bit polling
• Two PLCC and LCC Pinouts
- X28C512
• X28C010 EPROM pin compatible
- X28C513
• Compatible with lower density EEPROMs
• Pb-Free Plus Anneal Available (RoHS Compliant)