丝印：X28C512DM；Package：32LdCERDIP；5V, Byte Alterable EEPROM

文件：848.59 Kbytes 页数：21 Pages

RENESAS

瑞萨

丝印：X28C512DMB-12；Package：32LdCERDIP；5V, Byte Alterable EEPROM

文件：848.59 Kbytes 页数：21 Pages

RENESAS

瑞萨

丝印：X28C512DMB-15；Package：32LdCERDIP；5V, Byte Alterable EEPROM

文件：848.59 Kbytes 页数：21 Pages

RENESAS

瑞萨

丝印：X28C512DMB-20；Package：32LdCERDIP；5V, Byte Alterable EEPROM

文件：848.59 Kbytes 页数：21 Pages

RENESAS

瑞萨

丝印：X28C512DM；Package：32LdCERDIP；5V, Byte Alterable EEPROM

文件：848.59 Kbytes 页数：21 Pages

RENESAS

瑞萨

丝印：X28C512DMB-12；Package：32LdCERDIP；5V, Byte Alterable EEPROM

文件：848.59 Kbytes 页数：21 Pages

RENESAS

瑞萨

丝印：X28C512DMB-15；Package：32LdCERDIP；5V, Byte Alterable EEPROM

文件：848.59 Kbytes 页数：21 Pages

RENESAS

瑞萨

丝印：X28C512DMB-20；Package：32LdCERDIP；5V, Byte Alterable EEPROM

文件：848.59 Kbytes 页数：21 Pages

RENESAS

瑞萨

5V, Byte Alterable EEPROM

The X28C512, X28C513 are 64K x 8 EEPROM, fabricated with Intersil’s proprietary, high performance, floating gate CMOS technology. Like all Intersil programmable nonvolatile memories, the X28C512, X28C513 are 5V only devices. The X28C512, X28C513 feature the JEDEC approved pin out for byte wide mem

文件：599.03 Kbytes 页数：25 Pages

Intersil

5 Volt, Byte Alterable E2PROM

DESCRIPTION The X28C512/513 is an 64K x 8 E2PROM, fabricated with Xicor’s proprietary, high performance, floating gate CMOS technology. Like all Xicor programmable nonvolatile memories the X28C512/513 is a 5V only device. The X28C512/513 features the JEDEC approved pinout for bytewide memories,

文件：126.2 Kbytes 页数：25 Pages

Xicor

Xicor Inc.