5V, Byte Alterable EEPROM

文件：465.17 Kbytes 页数：21 Pages

INTERSIL

丝印：X28C512PI-12；Package：32LdPDIP；5V, Byte Alterable EEPROM

文件：848.59 Kbytes 页数：21 Pages

RENESAS

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丝印：X28C512RMB-12；Package：32LdFlatPack；5V, Byte Alterable EEPROM

文件：848.59 Kbytes 页数：21 Pages

RENESAS

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5V, Byte Alterable EEPROM

5V, Byte Alterable EEPROM\nThe X28C512, X28C513 are 64K x 8 EEPROM, fabricated with Intersil’s proprietary, high performance, floating gate CMOS technology. Like all Intersil programmable nonvolatile memories, the X28C512, X28C513 are 5V only devices. The X28C512, X28C513 feature the JEDEC approved • Access Time: 90ns\n• Simple Byte and Page Write\n- Single 5V supply\n• No external high voltages or VPPcontrol circuits\n- Self-timed\n• No erase before write\n• No complex programming algorithms\n• No overerase problem\n• Low Power CMOS\n- Active: 50mA\n- Standby: 500µA\n• Software Data Protectio;

Renesas

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5 Volt, Byte Alterable E2PROM

Renesas

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Package：32-LCC（J 形引线）；包装：托盘 类别：集成电路（IC） 存储器 描述：IC EEPROM 512KBIT PAR 32PLCC

Renesas Electronics America Inc