丝印：X28C010DM-12；5V, Byte Alterable EEPROM

Features • Access time: 120ns • Simple byte and page write - Single 5V supply - No external high voltages or VPP control circuits - Self-timed • No erase before write • No complex programming algorithms • No overerase problem • Low power CMOS - Active: 50mA - Standby: 500μA • Software

文件：823.93 Kbytes 页数：20 Pages

RENESAS

瑞萨

丝印：X28C010DM-15；5V, Byte Alterable EEPROM

Features • Access time: 120ns • Simple byte and page write - Single 5V supply - No external high voltages or VPP control circuits - Self-timed • No erase before write • No complex programming algorithms • No overerase problem • Low power CMOS - Active: 50mA - Standby: 500μA • Software

文件：823.93 Kbytes 页数：20 Pages

RENESAS

瑞萨

丝印：X28C010FI-12；5V, Byte Alterable EEPROM

Features • Access time: 120ns • Simple byte and page write - Single 5V supply - No external high voltages or VPP control circuits - Self-timed • No erase before write • No complex programming algorithms • No overerase problem • Low power CMOS - Active: 50mA - Standby: 500μA • Software

文件：823.93 Kbytes 页数：20 Pages

RENESAS

瑞萨

丝印：X28C010FI-15；5V, Byte Alterable EEPROM

Features • Access time: 120ns • Simple byte and page write - Single 5V supply - No external high voltages or VPP control circuits - Self-timed • No erase before write • No complex programming algorithms • No overerase problem • Low power CMOS - Active: 50mA - Standby: 500μA • Software

文件：823.93 Kbytes 页数：20 Pages

RENESAS

瑞萨

丝印：X28C010FI-20；5V, Byte Alterable EEPROM

Features • Access time: 120ns • Simple byte and page write - Single 5V supply - No external high voltages or VPP control circuits - Self-timed • No erase before write • No complex programming algorithms • No overerase problem • Low power CMOS - Active: 50mA - Standby: 500μA • Software

文件：823.93 Kbytes 页数：20 Pages

RENESAS

瑞萨

丝印：X28C010FM；5V, Byte Alterable EEPROM

Features • Access time: 120ns • Simple byte and page write - Single 5V supply - No external high voltages or VPP control circuits - Self-timed • No erase before write • No complex programming algorithms • No overerase problem • Low power CMOS - Active: 50mA - Standby: 500μA • Software

文件：823.93 Kbytes 页数：20 Pages

RENESAS

瑞萨

丝印：X28C010FM-12；5V, Byte Alterable EEPROM

Features • Access time: 120ns • Simple byte and page write - Single 5V supply - No external high voltages or VPP control circuits - Self-timed • No erase before write • No complex programming algorithms • No overerase problem • Low power CMOS - Active: 50mA - Standby: 500μA • Software

文件：823.93 Kbytes 页数：20 Pages

RENESAS

瑞萨

丝印：X28C010K-25；5V, Byte Alterable EEPROM

Features • Access time: 120ns • Simple byte and page write - Single 5V supply - No external high voltages or VPP control circuits - Self-timed • No erase before write • No complex programming algorithms • No overerase problem • Low power CMOS - Active: 50mA - Standby: 500μA • Software

文件：823.93 Kbytes 页数：20 Pages

RENESAS

瑞萨

丝印：X28C010KM-12；5V, Byte Alterable EEPROM

Features • Access time: 120ns • Simple byte and page write - Single 5V supply - No external high voltages or VPP control circuits - Self-timed • No erase before write • No complex programming algorithms • No overerase problem • Low power CMOS - Active: 50mA - Standby: 500μA • Software

文件：823.93 Kbytes 页数：20 Pages

RENESAS

瑞萨

丝印：X28C010KM-25；5V, Byte Alterable EEPROM

Features • Access time: 120ns • Simple byte and page write - Single 5V supply - No external high voltages or VPP control circuits - Self-timed • No erase before write • No complex programming algorithms • No overerase problem • Low power CMOS - Active: 50mA - Standby: 500μA • Software

文件：823.93 Kbytes 页数：20 Pages

RENESAS

瑞萨