5 Volt, Byte Alterable EEPROM

The Intersil X28C010/X28HT010 is a 128K x 8 EEPROM, fabricated with Intersils proprietary, high performance, floating gate CMOS technology. Like all Intersil programmable non-volatile memories, the X28C010/X28HT010 is a 5V only device. The X28C010/X28HT010 features the JEDEC approved pin out for b

文件：617.02 Kbytes 页数：23 Pages

INTERSIL

5V, Byte Alterable EEPROM

Features • Access time: 120ns • Simple byte and page write - Single 5V supply - No external high voltages or VPP control circuits - Self-timed • No erase before write • No complex programming algorithms • No overerase problem • Low power CMOS - Active: 50mA - Standby: 500μA • Software

文件：823.93 Kbytes 页数：20 Pages

RENESAS

瑞萨

5V, Byte Alterable EEPROM

文件：440.12 Kbytes 页数：20 Pages

INTERSIL

5 Volt, Byte Alterable E2PROM

文件：127.06 Kbytes 页数：25 Pages

XICOR

Xicor Inc.

5V, Byte Alterable EEPROM

Support is limited to customers who have already adopted these products.\n\nThe Intersil X28C010/X28HT010 is a 128k x 8 EEPROM, fabricated with Intersil's proprietary, high performance, floating gate CMOS technology. Like all Intersil programmable non-volatile memories, the X28C010/X28HT010 is a 5V • Access time: 120ns\n• Simple byte and page write\n• Single 5V supply\n• No external high voltages or VPP control circuits\n• Self-timed\n• No erase before write\n• No complex programming algorithms\n• No overerase problem\n• Low power CMOS\n• Active: 50mA\n• Standby: 500µA\n• Software data protect;

Renesas

瑞萨

5 Volt, Byte Alterable EEPROM

The Intersil X28C010/X28HT010 is a 128K x 8 EEPROM, fabricated with Intersils proprietary, high performance, floating gate CMOS technology. Like all Intersil programmable non-volatile memories, the X28C010/X28HT010 is a 5V only device. The X28C010/X28HT010 features the JEDEC approved pin out for b

文件：617.02 Kbytes 页数：23 Pages

INTERSIL

5 Volt, Byte Alterable EEPROM

The Intersil X28C010/X28HT010 is a 128K x 8 EEPROM, fabricated with Intersils proprietary, high performance, floating gate CMOS technology. Like all Intersil programmable non-volatile memories, the X28C010/X28HT010 is a 5V only device. The X28C010/X28HT010 features the JEDEC approved pin out for b

文件：617.02 Kbytes 页数：23 Pages

INTERSIL

丝印：X28C010D-12；5V, Byte Alterable EEPROM

Features • Access time: 120ns • Simple byte and page write - Single 5V supply - No external high voltages or VPP control circuits - Self-timed • No erase before write • No complex programming algorithms • No overerase problem • Low power CMOS - Active: 50mA - Standby: 500μA • Software

文件：823.93 Kbytes 页数：20 Pages

RENESAS

瑞萨

Protects data against system level inadvertent writes

The Intersil X28C010/X28HT010 is a 128K x 8 EEPROM, fabricated with Intersils proprietary, high performance, floating gate CMOS technology. Like all Intersil programmable non-volatile memories, the X28C010/X28HT010 is a 5V only device. The X28C010/X28HT010 features the JEDEC approved pin out for b

文件：446.1 Kbytes 页数：20 Pages

INTERSIL

Protects data against system level inadvertent writes

The Intersil X28C010/X28HT010 is a 128K x 8 EEPROM, fabricated with Intersils proprietary, high performance, floating gate CMOS technology. Like all Intersil programmable non-volatile memories, the X28C010/X28HT010 is a 5V only device. The X28C010/X28HT010 features the JEDEC approved pin out for b

文件：446.1 Kbytes 页数：20 Pages

INTERSIL