5 Volt, Byte Alterable EEPROM

The Intersil X28C010/X28HT010 is a 128K x 8 EEPROM, fabricated with Intersils proprietary, high performance, floating gate CMOS technology. Like all Intersil programmable non-volatile memories, the X28C010/X28HT010 is a 5V only device. The X28C010/X28HT010 features the JEDEC approved pin out for b

文件：617.02 Kbytes 页数：23 Pages

Intersil

5V, Byte Alterable EEPROM

Features • Access time: 120ns • Simple byte and page write - Single 5V supply - No external high voltages or VPP control circuits - Self-timed • No erase before write • No complex programming algorithms • No overerase problem • Low power CMOS - Active: 50mA - Standby: 500μA • Software

文件：823.93 Kbytes 页数：20 Pages

RENESAS

瑞萨

5V, Byte Alterable EEPROM

文件：440.12 Kbytes 页数：20 Pages

Intersil

5 Volt, Byte Alterable E2PROM

文件：127.06 Kbytes 页数：25 Pages

Xicor

Xicor Inc.

丝印：X28C010D-12；5V, Byte Alterable EEPROM

Features • Access time: 120ns • Simple byte and page write - Single 5V supply - No external high voltages or VPP control circuits - Self-timed • No erase before write • No complex programming algorithms • No overerase problem • Low power CMOS - Active: 50mA - Standby: 500μA • Software

文件：823.93 Kbytes 页数：20 Pages

RENESAS

瑞萨

丝印：X28C010D-15；5V, Byte Alterable EEPROM

Features • Access time: 120ns • Simple byte and page write - Single 5V supply - No external high voltages or VPP control circuits - Self-timed • No erase before write • No complex programming algorithms • No overerase problem • Low power CMOS - Active: 50mA - Standby: 500μA • Software

文件：823.93 Kbytes 页数：20 Pages

RENESAS

瑞萨

丝印：X28C010DI；5V, Byte Alterable EEPROM

Features • Access time: 120ns • Simple byte and page write - Single 5V supply - No external high voltages or VPP control circuits - Self-timed • No erase before write • No complex programming algorithms • No overerase problem • Low power CMOS - Active: 50mA - Standby: 500μA • Software

文件：823.93 Kbytes 页数：20 Pages

RENESAS

瑞萨

丝印：X28C010DI-12；5V, Byte Alterable EEPROM

Features • Access time: 120ns • Simple byte and page write - Single 5V supply - No external high voltages or VPP control circuits - Self-timed • No erase before write • No complex programming algorithms • No overerase problem • Low power CMOS - Active: 50mA - Standby: 500μA • Software

文件：823.93 Kbytes 页数：20 Pages

RENESAS

瑞萨

丝印：X28C010DI-15；5V, Byte Alterable EEPROM

Features • Access time: 120ns • Simple byte and page write - Single 5V supply - No external high voltages or VPP control circuits - Self-timed • No erase before write • No complex programming algorithms • No overerase problem • Low power CMOS - Active: 50mA - Standby: 500μA • Software

文件：823.93 Kbytes 页数：20 Pages

RENESAS

瑞萨

丝印：X28C010DM；5V, Byte Alterable EEPROM

Features • Access time: 120ns • Simple byte and page write - Single 5V supply - No external high voltages or VPP control circuits - Self-timed • No erase before write • No complex programming algorithms • No overerase problem • Low power CMOS - Active: 50mA - Standby: 500μA • Software

文件：823.93 Kbytes 页数：20 Pages

RENESAS

瑞萨