PJX8828_R2_00002

Marking：X28；Package：SOT-563；30V N-Channel Enhancement Mode MOSFET

Features AdvancedTrenchProcessTechnology ESDProtected SpeciallyDesignedforRelaydriver,Speedlinedrive,etc. LeadfreeincompliancewithEURoHS2.0 GreenmoldingcompoundasperIEC61249standard MechanicalData Case:SOT-563Package Terminals:Solderableper

PJX8872B_R1_00001

Marking：X2B；Package：SOT-563；60V N-Channel Enhancement Mode MOSFET

Features RDS(ON),VGS@10V,ID@600mA

PJX8872B_R2_00001

Marking：X2B；Package：SOT-563；60V N-Channel Enhancement Mode MOSFET

Features RDS(ON),VGS@10V,ID@600mA

PSMN2R0-100SSF

Marking：X2F0S10S；Package：SOT1235；NextPower 100 V, 2.07 mOhm, 267 Amp, N-channel MOSFET in LFPAK88 package

1.Generaldescription NextPower100V,standardlevelgatedriveMOSFET.Qualifiedto175°Candrecommendedfor industrialandconsumerapplications. 2.Featuresandbenefits •LowQrrforhigherefficiencyandlowerspiking •267AmpsID(max)continuouscurrentrating •LowQG×RDSonFOM

PSMN2R3-100SSE

Marking：X2E3S10S；Package：SOT1235；N-channel 100 V, 2.3 mOhm MOSFET with enhanced SOA in LFPAK88

1.Generaldescription N-channelenhancementmodeMOSFETinaLFPAK88packagequalifiedto175°C.Part ofNexperia'sApplicationSpecificMOSFETs(ASFETs)forHotswapandSoftStart.The PSMN2R3-100SSEdeliversverylowRDSonandenhancedsafeoperatingareaperformanceina high-reliability

PSMN2R3-80SSF

Marking：X2F3S80S；Package：SOT1235；NextPower 80 V, 2.3 mOhm, 240 Amp, N-channel MOSFET in LFPAK88 package

1.Generaldescription NextPower80V,standardlevelgatedriveMOSFET.Qualifiedto175°Candrecommendedfor industrialandconsumerapplications. 2.Featuresandbenefits •LowQrrforhigherefficiencyandlowerspiking •240AmpsID(max)continuouscurrentrating •LowQG×RDSonFOM

PSMN2R5-80SSE

Marking：X2E5S80S；Package：SOT1235；N-channel 80 V, 2.5 mOhm MOSFET with enhanced SOA in LFPAK88

1.Generaldescription N-channelenhancementmodeMOSFETinaLFPAK88packagequalifiedto175°C.Part ofNexperia'sApplicationSpecificMOSFETs(ASFETs)forHotswapandSoftStart.The PSMN2R8-80SSEdeliversverylowRDSonandenhancedsafeoperatingareaperformanceina high-reliabilityc

PSMN2R6-100SSF

Marking：X2F6S10S；Package：SOT1235；NextPower 100 V, 2.6 mΩ, 200 Amp, N-channel MOSFET in LFPAK88 package

1.Generaldescription NextPower100V,standardlevelgatedriveMOSFET.Qualifiedto175°Candrecommendedfor industrialandconsumerapplications. 2.Featuresandbenefits •LowQrrforhigherefficiencyandlowerspiking •200AmpsID(max)continuouscurrentrating •LowQG×RDSonFOM

PSMN2R8-80SSF

Marking：X2F8S80S；Package：SOT1235；NextPower 80 V, 2.8 mOhm, 190 Amp, N-channel MOSFET in LFPAK88 package

1.Generaldescription NextPower80V,standardlevelgatedriveMOSFET.Qualifiedto175°Candrecommendedfor industrialandconsumerapplications. 2.Featuresandbenefits •LowQRRforhigherefficiencyandlowerspiking •190AmpID(max)continuouscurrentrating •LowQG×RDSonFOMf

PSMN2R9-100SSE

Marking：X2E9S10S；Package：SOT1235；N-channel 100 V, 2.9 mOhm MOSFET with enhanced SOA in LFPAK88

1.Generaldescription N-channelenhancementmodeMOSFETinaLFPAK88packagequalifiedto175°C.Part ofNexperia'sApplicationSpecificMOSFETs(ASFETs)forHotswapandSoftStart.The PSMN2R9-100SSEdeliversverylowRDSonandenhancedsafeoperatingareaperformanceina high-reliability