N-Ch MOSFET

文件：1.12116 Mbytes 页数：5 Pages

WIINSOK

微硕半导体

低压场效应管（0-30V）

Winsok

微硕半导体

Silicon NPN Transistor High Voltage, High Speed Switch

Description: The NTE2318 is a high–voltage, high–speed, switching NPN transistor with an internal damper diode in a TO218 type package. This device is specifically designed for use in large screen color deflection circuits. Features: ● Collector–Emitter Voltage: VCE = 1500V ● Collector–Emitter

文件：23.81 Kbytes 页数：2 Pages

NTE

LINEAR BROADBAND AMPLIFIER

Product Description The RF2318 is a broadband general purpose, low cost high linearity RF amplifier IC. The device is manufactured on an advanced Gallium Arsenide Heterojunction Bipolar Transistor (HBT) process, and has been designed for use as an easily cascadable 75Ω gain block. The gain flatne

文件：110.65 Kbytes 页数：6 Pages

RFMD

威讯联合

LINEAR BROADBAND AMPLIFIER

Product Description The RF2318 is a broadband general purpose, low cost high linearity RF amplifier IC. The device is manufactured on an advanced Gallium Arsenide Heterojunction Bipolar Transistor (HBT) process, and has been designed for use as an easily cascadable 75Ω gain block. The gain flatne

文件：110.65 Kbytes 页数：6 Pages

RFMD

威讯联合