零件编号 | 下载&订购 | 功能描述 | 制造商&上传企业 | LOGO |
---|---|---|---|---|
P-ChannelEnhancementModeFieldEffectTransistor FEATURES -100V,-20A,RDS(ON)=130mW@VGS=-10V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. TO-220&TO-263package. RoHScompliant. | CET-MOSCET-MOS Technology Corp. 華瑞華瑞功率電子股份有限公司 | CET-MOS | ||
P-ChannelEnhancementModeFieldEffectTransistor FEATURES ■-100V,-16A,RDS(ON)=130mΩ@VGS=-10V. ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■Lead-freeplating;RoHScompliant. ■TO-251&TO-252package. | CETChino-Excel Technology 华瑞华瑞股份有限公司 | CET | ||
P-ChannelEnhancementModeFieldEffectTransistor FEATURES -100V,-16A,RDS(ON)=130mW@VGS=-10V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. TO-251&TO-252package. RoHScompliant. | CET-MOSCET-MOS Technology Corp. 華瑞華瑞功率電子股份有限公司 | CET-MOS | ||
P-ChannelEnhancementModeFieldEffectTransistor FEATURES ■-100V,-20A,RDS(ON)=130mΩ@VGS=-10V. ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■Lead-freeplating;RoHScompliant. ■TO-220&TO-263package. | CETChino-Excel Technology 华瑞华瑞股份有限公司 | CET | ||
P-ChannelEnhancementModeFieldEffectTransistor FEATURES -100V,-20A,RDS(ON)=130mW@VGS=-10V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. TO-220&TO-263package. RoHScompliant. | CET-MOSCET-MOS Technology Corp. 華瑞華瑞功率電子股份有限公司 | CET-MOS | ||
P-ChannelEnhancementModeFieldEffectTransistor FEATURES -100V,-16A,RDS(ON)=130mW@VGS=-10V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. TO-251&TO-252package. RoHScompliant. | CET-MOSCET-MOS Technology Corp. 華瑞華瑞功率電子股份有限公司 | CET-MOS | ||
P-ChannelEnhancementModeFieldEffectTransistor FEATURES ■-100V,-16A,RDS(ON)=130mΩ@VGS=-10V. ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■Lead-freeplating;RoHScompliant. ■TO-251&TO-252package. | CETChino-Excel Technology 华瑞华瑞股份有限公司 | CET | ||
P-ChannelEnhancementMOSFET Features •VDS=-100V,ID=-20A •RDS(ON)=86mΩ@VGS=-10V(Typ.) •RDS(ON)=90mΩ@VGS=-4.5V(Typ.) •HighPowerandcurrenthandingcapability •Leadfreeproductisacquired •SurfaceMountPackage MainApplications •BatteryProtection •LoadSwitch •PowerManagement | GWSEMIGoodwork Semiconductor Co., Ltd 唯聖電子唯聖電子有限公司 | GWSEMI | ||
P-ChannelEnhancementModeFieldEffectTransistor | MCCMicro Commercial Components 美微科美微科半导体股份有限公司 | MCC | ||
iscP-ChannelMOSFETTransistor FEATURES ·DrainCurrent-ID=-20A@TC=25℃ ·DrainSourceVoltage-VDSS=-100V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=0.15Ω(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive. | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ISC | ||
POWERFIELDEFFECTTRANSISTOR | MotorolaMotorola, Inc 摩托罗拉 | Motorola | ||
iscP-ChannelMOSFETTransistor FEATURES ·DrainCurrent-ID=-20A@TC=25℃ ·DrainSourceVoltage-VDSS=-100V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=0.15Ω(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive. | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ISC | ||
PowerFieldEffectTransistor | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体产品股份有限公司 | NJSEMI | ||
NCEP-ChannelEnhancementModePowerMOSFET Description TheNCE20P10Jusesadvancedtrenchtechnologytoprovide excellentRDS(ON),lowgatechargeandoperationwithgate voltages.Thisdeviceissuitableforuseasaloadswitching applicationandawidevarietyofotherapplications. GeneralFeatures ●VDS=-20V,ID=-10A RDS(ON) | NCEPOWERWuxi NCE Power Semiconductor Co., Ltd 无锡新洁能股份无锡新洁能股份有限公司 | NCEPOWER | ||
ProgammableArrayLogicSeries24(PALSeries24) | NSCNational Semiconductor (TI) 美国国家半导体美国国家半导体公司 | NSC | ||
ProgammableArrayLogicSeries24(PALSeries24) | NSCNational Semiconductor (TI) 美国国家半导体美国国家半导体公司 | NSC | ||
ProgammableArrayLogicSeries24(PALSeries24) | NSCNational Semiconductor (TI) 美国国家半导体美国国家半导体公司 | NSC | ||
ProgammableArrayLogicSeries24(PALSeries24) | NSCNational Semiconductor (TI) 美国国家半导体美国国家半导体公司 | NSC | ||
ProgammableArrayLogicSeries24(PALSeries24) | NSCNational Semiconductor (TI) 美国国家半导体美国国家半导体公司 | NSC | ||
ProgammableArrayLogicSeries24(PALSeries24) | NSCNational Semiconductor (TI) 美国国家半导体美国国家半导体公司 | NSC |
供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
---|---|---|---|---|---|---|---|
WST |
22+23+ |
SOT-23 |
41008 |
绝对原装正品全新进口深圳现货 |
询价 | ||
WST |
21+ |
SOT-23 |
35200 |
一级代理分销/放心采购 |
询价 | ||
WST |
21+ |
TO-92 |
6000 |
绝对原裝现货 |
询价 | ||
S-TECH |
2022+ |
2000 |
全新原装 货期两周 |
询价 | |||
S-TECH |
NA |
8560 |
一级代理 原装正品假一罚十价格优势长期供货 |
询价 | |||
WINSOK(微硕) |
23+ |
SOT233L |
6000 |
诚信服务,绝对原装原盘 |
询价 | ||
24+ |
N/A |
62000 |
一级代理-主营优势-实惠价格-不悔选择 |
询价 | |||
WINSOK |
23+ |
SOT-23N |
50000 |
原装正品 支持实单 |
询价 | ||
WINSOK微硕 |
2112+ |
SOT-23N |
105000 |
3000个/圆盘一级代理专营品牌!原装正品,优势现货, |
询价 | ||
WINSOK |
19+ROHS |
SOT-23-3L |
180000 |
原装正品现货,可开发票,假一赔十 |
询价 |
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