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IXFK180N15P

PolarHiPerFETPowerMOSFET

Polar™HiPerFETPowerMOSFET N-ChannelEnhancementMode FastIntrinsicDiode AvalancheRated Features •Internationalstandardpackages •UnclampedInductiveSwitching(UIS)rated •Lowpackageinductance -easytodriveandtoprotect Advantages •Easytomount •Spacesavings •H

IXYS

IXYS Integrated Circuits Division

IXFN180N15P

PolarHTHiPerFETPowerMOSFET

PolarHT™HiPerFETPowerMOSFET N-ChannelEnhancementMode AvalancheRated FastIntrinsicDiode Features •Internationalstandardpackage •EncapsulatingepoxymeetsUL94V-0,flammabilityclassification •miniBLOCwithAluminiumnitrideisolation •Fastrecoverydiode •UnclampedInducti

IXYS

IXYS Integrated Circuits Division

IXFR180N15

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent-ID=100A@TC=25℃ ·DrainSourceVoltage-VDSS=150V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=13mΩ(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

IXFR180N15P

PolarHVHiPerFETPowerMOSFETISOPLUS247

PolarHV™HiPerFETPowerMOSFETISOPLUS247™(ElectricallyIsolatedBackSurface) N-ChannelEnhancementMode AvalancheRated FastIntrinsicDiode Features •Internationalstandardisolatedpackage •ULrecognizedpackage •SiliconchiponDirect-Copper-Bondsubstrate -Highpowerdissipa

IXYS

IXYS Integrated Circuits Division

IXFX180N15

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent–ID=180A@TC=25℃ ·DrainSourceVoltage- :VDSS=150V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=11mΩ(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DCcon

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

IXFX180N15P

PolarHiPerFETPowerMOSFET

Polar™HiPerFETPowerMOSFET N-ChannelEnhancementMode FastIntrinsicDiode AvalancheRated Features •Internationalstandardpackages •UnclampedInductiveSwitching(UIS)rated •Lowpackageinductance -easytodriveandtoprotect Advantages •Easytomount •Spacesavings •H

IXYS

IXYS Integrated Circuits Division

IXTK180N15

HighCurrentMegaMOSTMFET

Features •LowRDS(on)HDMOSTMprocess •Ruggedpolysilicongatecellstructure •Internationalstandardpackage •Fastswitchingtimes Applications •Motorcontrols •DCchoppers •Switched-modepowersupplies Advantages •Easytomountwithonescrew (isolatedmountingscrewhole)

IXYS

IXYS Integrated Circuits Division

IXTK180N15

iscN-ChannelMOSFETTransistor

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

IXTK180N15P

N-ChannelEnhancementModePowerMOSFET

IXYS

IXYS Integrated Circuits Division

IXTK180N15P

PolarHTTMPowerMOSFETN-ChannelEnhancementMode

Features ●Internationalstandardpackage ●UnclampedInductiveSwitching(UIS)rated ●Lowpackageinductance -easytodriveandtoprotect Advantages ●Easytomount ●Spacesavings ●Highpowerdensity

IXYS

IXYS Integrated Circuits Division

供应商型号品牌批号封装库存备注价格
23+
N/A
54000
一级代理放心采购
询价
ApexToolGroup/CooperTool
5
全新原装 货期两周
询价
Apex Tool Group/Cooper Tools
2022+
1
全新原装 货期两周
询价
Apex
1824+
NA
16
加我QQ或微信咨询更多详细信息,
询价
2017+
NA
28562
只做原装正品假一赔十!
询价
VISHAY
18+
999999
进口全新原装现货
询价
VISHAY
23+
SMD
9868
专做原装正品,假一罚百!
询价
ELECTRONI
21+
NA
6000
绝对原裝现货
询价
只做原装
21+
36520
一级代理/放心采购
询价
原装
1923+
NA
9200
公司原装现货假一罚十特价欢迎来电咨询
询价
更多WSM180N15供应商 更新时间2024-6-25 11:36:00